Power Amplifier Silicon PNP Transistor TOSHIBA 2SA1941 O S1 E S for High Fidelity Audio Applications
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Product Description
Product Overview
The TOSHIBA 2SA1941 is a Silicon PNP Triple Diffused Type transistor designed for Power Amplifier Applications. It features a high breakdown voltage of VCEO = -140 V (min) and is complementary to the 2SC5198. This transistor is recommended for the output stage of 70-W high-fidelity audio frequency amplifiers.
Product Attributes
- Brand: TOSHIBA
- Origin: Japan (implied by brand and typical datasheet origin)
- Certifications: RoHS COMPATIBLE / [[G]]/RoHS [[Pb]] (Note: Specific details require contacting TOSHIBA sales representative)
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -140 V, IE = 0 | -5.0 | A | ||
| Emitter cut-off current | IEBO | VEB = -5 V, IC = 0 | -5.0 | A | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = -50 mA, IB = 0 | -140 | V | ||
| DC current gain | hFE | VCE = -5 V, IC = -1 A | 55 | 160 | ||
| VCE = -5 V, IC = -5 A | 35 | 83 | ||||
| Collector-emitter saturation voltage | VCE (sat) | IC = -7 A, IB = -0.7 A | -0.8 | -2.0 | V | |
| Base-emitter voltage | VBE | VCE = -5 V, IC = -5 A | -1.0 | -1.5 | V | |
| Transition frequency | fT | VCE = -5 V, IC = -1 A | 30 | MHz | ||
| Collector output capacitance | Cob | VCB = -10 V, IE = 0, f = 1 MHz | 320 | pF |
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -140 | V |
| Collector-emitter voltage | VCEO | -140 | V |
| Emitter-base voltage | VEBO | -5 | V |
| Collector current | IC | -10 | A |
| Base current | IB | -1 | A |
| Collector power dissipation (Tc = 25C) | PC | 100 | W |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | -55 to 150 | C |
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