P Channel Enhancement Mode Field Effect Transistor YANGJIE YJS4407C for Battery Protection Solutions

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Product Description

YJS4407C P-Channel Enhancement Mode Field Effect Transistor

The YJS4407C is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for battery protection, power management, and load switch applications. The device meets UL 94 V-0 flammability rating and is Halogen Free.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Origin: China
Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 3

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Product Summary
Drain-Source Voltage	VDS				-30	V
Drain Current	ID				-12	A
RDS(ON) at VGS=-20V	RDS(ON)	at VGS=-20V			<10	m
RDS(ON) at VGS=-10V	RDS(ON)	at VGS=-10V			<12	m
RDS(ON) at VGS=-4.5V	RDS(ON)	at VGS=-4.5V			<20	m
100% EAS Tested	EAS
Absolute Maximum Ratings
Drain-source Voltage	VDS	TA=25 unless otherwise noted			-30	V
Gate-source Voltage	VGS	TA=25 unless otherwise noted			25	V
Drain Current	ID	TA=25			-12	A
Drain Current	ID	TA=100			-7.5	A
Pulsed Drain Current	IDM				-100	A
Avalanche energy	EAS				100	mJ
Total Power Dissipation	PD	TA=25			2.5	W
Total Power Dissipation	PD	TA=100			1	W
Junction and Storage Temperature Range	TJ ,TSTG		-55		+150
Thermal resistance
Thermal Resistance Junction-to-Ambient	RJA	Steady-State		40	50	/W
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS= 0V, ID=-250A	-30			V
Zero Gate Voltage Drain Current	IDSS	VDS=-30V, VGS=0V			-1	A
Zero Gate Voltage Drain Current	IDSS	VDS=-30V, VGS=0V, Tj=150			-100	A
Gate-Body Leakage Current	IGSS	VGS= 25V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS= VGS, ID=-250A	-1.2	-1.8	-2.8	V
Static Drain-Source On-Resistance	RDS(on)	VGS=-20V, ID=-12A		7.5	10	m
Static Drain-Source On-Resistance	RDS(on)	VGS=-10V, ID=-12A		9	12	m
Static Drain-Source On-Resistance	RDS(on)	VGS=-6V, ID=-10A		11	15	m
Static Drain-Source On-Resistance	RDS(on)	VGS=-4.5V, ID=-10A		14.5	20	m
Diode Forward Voltage	VSD	IS=-12A, VGS=0V			-0.85	-1.2	V
Gate resistance	RG	f=1MHz		16
Maximum Body-Diode Continuous Current	IS				-12	A
Dynamic Parameters
Input Capacitance	Ciss	VDS=-15V, VGS=0V, f=1MHz		1860		pF
Output Capacitance	Coss	VDS=-15V, VGS=0V, f=1MHz		310		pF
Reverse Transfer Capacitance	Crss	VDS=-15V, VGS=0V, f=1MHz		280		pF
Switching Parameters
Total Gate Charge	Qg	VGS=-10V, VDS=-15V, ID=-12A		38		nC
Gate-Source Charge	Qgs	VGS=-10V, VDS=-15V, ID=-12A		5		nC
Gate-Drain Charge	Qg d	VGS=-10V, VDS=-15V, ID=-12A		10		nC
Reverse Recovery Charge	Qrr	IF=-12A, di/dt=100A/us		19		nC
Reverse Recovery Time	trr	IF=-12A, di/dt=100A/us		40		ns
Turn-on Delay Time	tD(on)	VGS=-10V, VDD=-15V, ID=-12A RGEN=2.3		8		ns
Turn-on Rise Time	tr	VGS=-10V, VDD=-15V, ID=-12A RGEN=2.3		6		ns
Turn-off Delay Time	tD(off)	VGS=-10V, VDD=-15V, ID=-12A RGEN=2.3		95		ns
Turn-off fall Time	tf	VGS=-10V, VDD=-15V, ID=-12A RGEN=2.3		62		ns