High speed switching N Channel MOSFET YANGJIE YJGD20G10B featuring low RDS ON and high density cell design
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Product Description
Product Overview
The YJGD20G10B is a high-performance N-Channel and N-Channel Complementary MOSFET from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring a split gate trench MOSFET technology and a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This MOSFET is suitable for various industrial applications, including DC-DC converters, power management functions, and industrial motor drives.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 1
- Technology: Split gate trench MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25 | 6.5 | A | ||
| TA=100 | 4 | A | ||||
| ID | TC=25 | 20 | A | |||
| ID | TC =100 | 12.5 | A | |||
| Pulsed Drain Current | IDM | 80 | A | |||
| Avalanche energy | EAS | 72 | mJ | |||
| Total Power Dissipation | PD | TA=25 | 2 | W | ||
| TA=100 | 0.8 | W | ||||
| PD | TC=25 | 69 | W | |||
| PD | TC =100 | 27 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal resistance | ||||||
| Thermal Resistance Junction-to-Ambient Steady-State | RJA | D | 50 | 60 | /W | |
| Thermal Resistance Junction-to-Case Steady-State | RJC | D | 1.5 | 1.8 | /W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | µA |
| IDSS | VDS=100V, VGS=0V, Tj=150 | - | - | 100 | µA | |
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 15 | 19 | mΩ |
| VGS=4.5V, ID=7A | - | 18 | 23 | mΩ | ||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | - | - | 1.2 | V |
| Gate resistance | RG | f=1MHz | - | 1.5 | - | Ω |
| Maximum Body-Diode Continuous Current | IS | - | - | 20 | A | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | - | 1150 | - | pF |
| Output Capacitance | Coss | - | 430 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 8 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=20A | - | 20 | - | nC |
| Gate-Source Charge | Qgs | - | 5.6 | - | ||
| Gate-Drain Charge | Qg d | - | 2.8 | - | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | - | 32 | - | nC |
| Reverse Recovery Time | trr | - | 41 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=50V, ID=20A RGEN=3Ω | - | 7 | - | ns |
| Turn-on Rise Time | tr | - | 29 | - | ||
| Turn-off Delay Time | tD(off) | - | 18 | - | ||
| Turn-off fall Time | tf | - | 7 | - | ||
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