Power Management and Motor Drive N Channel Transistor YANGJIE YJG80G06B Featuring Low RDS ON Design
Product Overview
The YJG80G06B is a N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features Split Gate Trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC Converters, power management functions, and industrial and motor drive applications.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions | |
| Absolute Maximum Ratings | |||||
| Drain-source Voltage | VDS | 60 | V | ||
| Gate-source Voltage | VGS | ±20 | V | ||
| Drain Current (Silicon limited) | ID | 80 | A | Tc=25°C | |
| 50 | A | Tc=100°C | |||
| Pulsed Drain Current | IDM | 320 | A | ||
| Avalanche energy | EAS | 400 | mJ | B | |
| Total Power Dissipation | PD | 96 | W | Tc=25°C C | |
| 38.4 | W | Tc=100°C C | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | °C | ||
| Thermal Resistance | |||||
| Thermal Resistance Junction-to-Ambient (t≤10S) | RθJA | 15 | 20 | °C/W D | |
| Thermal Resistance Junction-to-Ambient (Steady-State) | RθJA | 45 | 55 | °C/W D | |
| Thermal Resistance Junction-to-Case (Steady-State) | RθJC | 1.0 | 1.3 | °C/W | |
| Electrical Characteristics | |||||
| Static Parameter | |||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS= 0V, ID=250μA | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V TJ=25°C | |
| 5 | μA | TJ=55°C | |||
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS= ±20V, VDS=0V | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VDS= VGS, ID=250μA |
| Static Drain-Source On-Resistance | RDS(ON) | 3.0 | 4.2 | mΩ | VGS= 10V, ID=20A |
| 3.9 | 5.2 | mΩ | VGS= 4.5V, ID=10A | ||
| Diode Forward Voltage | VSD | 0.85 | 1.3 | V | IS=20A,VGS=0V |
| Maximum Body-Diode Continuous Current | IS | 80 | A | ||
| Dynamic Parameters | |||||
| Input Capacitance | Ciss | 4000 | pF | VDS=35V,VGS=0V,f=1MHZ | |
| Output Capacitance | Coss | 780 | pF | ||
| Reverse Transfer Capacitance | Crss | 26 | pF | ||
| Gate Resistance | Rg | 0.8 | Ω | f=1MHZ, Open drain | |
| Switching Parameters | |||||
| Total Gate Charge | Qg(10V) | 66 | nC | VDS=30V,ID=20A | |
| Total Gate Charge | Qg(4.5V) | 30.7 | nC | ||
| Gate-Source Charge | Qgs | 14.8 | nC | ||
| Gate-Drain Charge | Qg d | 9.5 | nC | ||
| Reverse Recovery Charge | Qrr | 72 | nC | IF=20A, di/dt=200A/us | |
| Reverse Recovery Time | trr | 38.5 | ns | ||
| Turn-on Delay Time | tD(on) | 16.8 | ns | VGS=10V,VDD=30V,ID=12A RGEN=3Ω | |
| Turn-on Rise Time | tr | 37.4 | ns | ||
| Turn-off Delay Time | tD(off) | 49.1 | ns | ||
| Turn-off fall Time | tf | 46 | ns | ||
Notes:
A. Repetitive rating; pulse width limited by max. junction temperature.
B. VDD=50V, RG=25Ω, L=2mH, IAS=20A.
C. Pd is based on max. junction temperature, using junction-case thermal resistance.
D. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.
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