Amplifier Transistor Featuring Collector Current 0.2A WILLSEMI WPT2F06-3/TR PNP General Purpose Type

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Product Description

Product Overview

The WPT2F06 is a PNP general-purpose transistor designed for amplifier applications. It is Pb-free and Halogen-free, offering a complementary option to the WNT2F04. With a collector current of -0.2A, it is suitable for various electronic circuits.

Product Attributes

Brand: Will Semiconductor Ltd.
Certifications: Pb-free, Halogen-free
Complementary to: WNT2F04

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Collector-emitter Voltage	VCEO				-40	V
Collector-base Voltage	VCBO				-40	V
Emitter-base Voltage	VEBO				-5	V
Collector Current	IC				-200	mA
Collector Power Dissipation	PC				200	mW
Thermal Resistance Junction To Ambient	RJA				625	C /W
Junction Temperature	TJ				150	C
Storage Temperature Range	Tstg		-55		150	C
Collector-emitter breakdown voltage	BVCEO	IC=-1mA, IB=0mA			-40	V
Collector-base breakdown voltage	BVCBO	IC=10uA, IE=0mA			-40	V
Emitter-base breakdown voltage	BVEBO	IE=-10uA, IC=0mA			-5	V
Collector cutoff current	ICEX	VCE=-30V,VEB(OFF)=-3V			-50	nA
Collector cutoff current	ICBO	VCB=-40V, IE=0A			-100	nA
Emitter cutoff current	IEBO	VEB=-5V, IC=0A			-100	nA
Collector-emitter saturation voltage	VCE(sat)	IC=-50mA, IB=-5mA			-0.4	V
Base-emitter saturation voltage	VBE(sat)	IC=-50mA, IB=-5mA			-0.95	V
DC current gain	hFE	IC=-10mA , VCE=-1V	100		300
DC current gain	hFE	IC=-50mA , VCE=-1V	60
DC current gain	hFE	IC=-100mA , VCE=-1V	30
Transition frequency	fT	VCE=-20V,IC=-10mA, f=100MHz			250	MHz
Noise figure	NF	IC=-100A; VCE=-5V; RS=1 k; f=10Hz to15.7 kHz			4	dB
Delay time	td	VCC=-3V, VBE(off)=-0.5V IC=-10mA,IB1=-1mA			35	ns
Rise time	tr				35	ns
Storage time	ts	VCC=-3V, IC=-10mA, IB1= IB2=-1mA			225	ns
Fall time	tf				75	ns