Automotive Grade P Channel MOSFET YANGJIE YJG80GP06BQ with Split Gate Trench Technology and RoHS Compliance
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The YJG80GP06BQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM with excellent stability and uniformity. This component is designed for power management, portable equipment, and 12/24V automotive systems. It meets Moisture Sensitivity Level 3 and has an epoxy that meets UL 94 V-0 flammability rating. A suffix "Q" indicates AEC-Q101 qualification.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJG80GP06BQ
- Technology: Split gate trench MOSFET
- Certifications: RoHS Compliant, AEC-Q101 qualified (suffix "Q")
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 3
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |
| Absolute Maximum Ratings | |||||||
| Drain-source Voltage | VDS | -60 | V | ||||
| Gate-source Voltage | VGS | ±18 | V | ||||
| Drain Current | ID | TA=25 | -12 | A | |||
| Drain Current | ID | TA=100 | -7.5 | A | |||
| Drain Current | ID | TC=25 | -80 | A | |||
| Drain Current | ID | TC=100 | -50 | A | |||
| Pulsed Drain Current | IDM | -320 | A | ||||
| Avalanche energy | EAS | TJ=25, VDD=-40V, VGS=-10V, L=2mH, IAS=-20A | 400 | mJ | |||
| Total Power Dissipation | PD | TA=25 | 2.5 | W | |||
| Total Power Dissipation | PD | TA=100 | 1 | W | |||
| Total Power Dissipation | PD | TC=25 | 120 | W | |||
| Total Power Dissipation | PD | TC=100 | 48 | W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ||||
| Thermal resistance | |||||||
| Thermal Resistance Junction-to-Ambient | RJA | Steady-State | 40 | 50 | /W | ||
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 0.8 | 1.04 | /W | ||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -60 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | µA | |||
| Gate-Body Leakage Current | IGSS | VGS= ±18V, VDS=0V | ±100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250µA | -2 | -2.7 | -4 | V | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-20A | 6.1 | 8.5 | mΩ | ||
| Diode Forward Voltage | VSD | IS=-20A, VGS=0V | -0.9 | -1.3 | V | ||
| Gate resistance | RG | f=1MHz, Open drain | 10 | Ω | |||
| Maximum Body-Diode Continuous Current | IS | -80 | A | ||||
| Dynamic Parameters | |||||||
| Input Capacitance | Ciss | VDS=-25V, VGS=0V, f=1MHz | 5500 | pF | |||
| Output Capacitance | Coss | 1555 | pF | ||||
| Reverse Transfer Capacitance | Crss | 220 | pF | ||||
| Switching Parameters | |||||||
| Total Gate Charge | Qg | VGS=-10V, VDS=-30V, ID=-20A | 80.7 | nC | |||
| Gate-Source Charge | Qgs | 19 | nC | ||||
| Gate-Drain Charge | Qg d | 18.3 | nC | ||||
| Reverse Recovery Charge | Qrr | IF=-20A, di/dt=100A/us | 84 | nC | |||
| Reverse Recovery Time | trr | 57.5 | ns | ||||
| Turn-on Delay Time | tD(on) | VGS=-10V, VDD=-30V, RGEN=1.6Ω, ID=-20A | 13.2 | ns | |||
| Turn-on Rise Time | tr | 27.7 | |||||
| Turn-off Delay Time | tD(off) | 137.8 | |||||
| Turn-off fall Time | tf | 59.5 | |||||
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