Power Switching Transistor YANGJIE YJD80G06CQ N Channel Enhancement Mode with Low Switching Loss and Excellent Stability
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The YJD80G06CQ is a N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features low RDS(on) & FOM, extremely low switching loss, excellent stability and uniformity, and fast switching with soft recovery. This transistor is suitable for power switching applications, hard switched and high frequency circuits, uninterruptible power supply, DC-DC converters, and 12V and 24V automotive systems. The "Q" suffix indicates AEC-Q101 qualification.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJD80G06CQ
- Certifications: AEC-Q101 qualified (suffix "Q"), RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TC=25°C | 80 | A | ||
| Drain Current | ID | TC =100°C | 50 | A | ||
| Pulsed Drain Current | IDM | 240 | A | |||
| Avalanche energy | EAS | B | 144 | mJ | ||
| Total Power Dissipation | PD | TC=25°C C | 78 | W | ||
| Total Power Dissipation | PD | TC =100°C C | 31 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | °C | ||
| Thermal resistance | ||||||
| Thermal Resistance Junction-to-Ambient Steady-State | RθJA | D | 40 | 50 | °C/W | |
| Thermal Resistance Junction-to-Case Steady-State | RθJC | 1.3 | 1.6 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250μA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 1.2 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 5.5 | 7.5 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=10A | 6.5 | 10 | mΩ | |
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 0.85 | 1.3 | V | |
| Maximum Body-Diode Continuous Current | IS | 80 | A | |||
| Gate resistance | RG | f=1MHz | 1.5 | Ω | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 2100 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 670 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 30 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=20A | 31 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V, VDS=30V, ID=20A | 6 | nC | ||
| Gate-Drain Charge | Qg | VGS=10V, VDS=30V, ID=20A | 5 | nC | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=500A/us | 18 | nC | ||
| Reverse Recovery Time | trr | IF=20A, di/dt=500A/us | 30 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=30V, ID=20A RGEN=3Ω | 10 | ns | ||
| Turn-on Rise Time | tr | VGS=10V, VDD=30V, ID=20A RGEN=3Ω | 34 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V, VDD=30V, ID=20A RGEN=3Ω | 26.2 | ns | ||
| Turn-off fall Time | tf | VGS=10V, VDD=30V, ID=20A RGEN=3Ω | 45 | ns | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina