Load Switching and High Frequency Circuit Transistor YANGJIE YJD50N03A N Channel Enhancement Mode MOSFET
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The YJD50N03A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supply systems.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 30 | V | ||
| VDS=30V,VGS=0V TJ=25 | 1 | A | ||||
| Zero Gate Voltage Drain Current | IDSS | TJ=55 | 5 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=15A | 6.5 | 9.0 | m | |
| VGS= 4.5V, ID=15A | 8.6 | 11.0 | m | |||
| Diode Forward Voltage | VSD | IS=15A,VGS=0V | 0.85 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 50 | A | |||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHZ | 920 | pF | ||
| Output Capacitance | Coss | 198 | pF | |||
| Reverse Transfer Capacitance | Crss | 114 | pF | |||
| Total Gate Charge | Qg | VGS=10V,VDS=15V,ID=50A | 28 | nC | ||
| Gate-Source Charge | Qgs | 7 | ||||
| Gate-Drain Charge | Qg d | 5 | ||||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | 25 | |||
| Reverse Recovery Time | trr | 26 | ns | |||
| Switching Parameters | tD(on) | VGS=10V,VDD=20V, ID=2A,RL=1 RGEN=3 | 8 | |||
| tr | 15 | |||||
| tD(off) | 27 | |||||
| tf | 7 | |||||
| Drain-source Voltage | VDS | 30 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TC=25 | 50 | A | ||
| TC=100 | 35 | A | ||||
| Pulsed Drain Current | IDM | 150 | A | |||
| Total Power Dissipation | PD | TC=25 | 34 | W | ||
| TC=100 | 17 | W | ||||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | |||
| Thermal Resistance Junction-to-Case | RJC | 4.4 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +175 |
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Sellina