TOSHIBA RN2303 TE85L F PNP Epitaxial Transistor for in Switching Inverter and Driver Circuit Designs
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Product Description
Product Overview
The RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring built-in bias resistors (PCT Process). These transistors are designed for applications requiring reduced external component count, leading to smaller system size and simplified assembly. They are complementary to the RN1301 to RN1306 series and are AEC-Q101 qualified.
Product Attributes
- Brand: Toshiba
- Certifications: AEC-Q101 qualified
Technical Specifications
| Part Number | Applications | Bias Resistor Values (R1/R2) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Collector Power Dissipation (PC) | Transition Frequency (fT) |
| RN2301 | Switching, Inverter Circuits, Interfacing, Driver Circuits | 4.7k / 4.7k | -50 V | -5 mA | 100 mW | 200 MHz |
| RN2302 | Switching, Inverter Circuits, Interfacing, Driver Circuits | 10k / 10k | -50 V | -5 mA | 100 mW | 200 MHz |
| RN2303 | Switching, Inverter Circuits, Interfacing, Driver Circuits | 22k / 22k | -50 V | -5 mA | 100 mW | 200 MHz |
| RN2304 | Switching, Inverter Circuits, Interfacing, Driver Circuits | 47k / 47k | -50 V | -5 mA | 100 mW | 200 MHz |
| RN2305 | Switching, Inverter Circuits, Interfacing, Driver Circuits | 2.2k / 47k | -50 V | -5 mA | 100 mW | 200 MHz |
| RN2306 | Switching, Inverter Circuits, Interfacing, Driver Circuits | 4.7k / 47k | -50 V | -5 mA | 100 mW | 200 MHz |
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