High speed switching TOSHIBA GT30J122A STA1 E D Silicon N Channel IGBT for inverter and PFC circuits
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Product Description
Product Overview
The GT30J122A is a Silicon N-Channel IGBT from Toshiba, designed for current-resonant inverter switching and partial-switching power factor correction (PFC) applications. It features high-speed switching with a typical fall time of 0.20 s and a low saturation voltage of 1.7 V (typ.) at 50 A collector current. This 4th generation enhancement-mode IGBT is packaged in a TO-3P(N) format.
Product Attributes
- Brand: Toshiba
- Commercial Production Start: 2010-06
- Certifications: RoHS Compatible
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings (Ta = 25, unless otherwise specified) | ||||
| Collector-emitter voltage | VCES | 600 | V | |
| Gate-emitter voltage | VGES | 25 | V | |
| Collector current (DC) | IC | 30 | A | |
| Collector current (1 ms) | ICP | 100 | A | |
| Collector power dissipation | PC | 120 | W | (Tc = 25) |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55 to 150 | ||
| Mounting torque | TOR | 0.8 | Nm | |
| Thermal Characteristics | ||||
| Junction-to-case thermal resistance | Rth(j-c) | 1.04 | /W | Max |
| Static Characteristics (Ta = 25, unless otherwise specified) | ||||
| Gate leakage current | IGES | 100 | nA | VGE = 25 V, VCE = 0 V |
| Collector cut-off current | ICES | 1.0 | mA | VCE = 600 V, VGE = 0 V |
| Gate-emitter cut-off voltage | VGE(OFF) | 3.0 | V | IC = 50 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCE(sat) | 1.7 | V | IC = 50 A, VGE = 15 V (typ.) |
| Dynamic Characteristics (Ta = 25, unless otherwise specified) | ||||
| Input capacitance | Cies | 2500 | pF | VCE = 10 V, VGE = 0 V, f = 1 MHz (typ.) |
| Switching time (rise time) | tr | 0.20 | s | Resistive load, VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (turn-on time) | ton | 0.30 | s | Resistive load, VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (fall time) | tf | 0.20 | s | Resistive load, VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
| Switching time (turn-off time) | toff | 0.50 | s | Resistive load, VCC = 300 V, IC = 50 A, VGG = 15 V, RG = 39 (typ.) |
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