Power Switching Transistor YANGJIE YJG40G10A with Split Gate Trench and High Current Capability

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Product Description

Product Overview

The YJG40G10A is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This transistor is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies.

Product Attributes

Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
Model: YJG40G10A
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVDSS	VGS= 0V, ID=250A	100			V
Zero Gate Voltage Drain Current	IDSS	VDS=100V,VGS=0V			1	A
Gate-Body Leakage Current	IGSS	VGS= 20V, VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VDS= VGS, ID=250A	1.0	1.8	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V, ID=20A		14	17.5	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V, ID=20A		17	21.5	m
Diode Forward Voltage	VSD	IS=20A,VGS=0V		1.3		V
Maximum Body-Diode Continuous Current	IS				40	A
Gate resistance	RG	f=1MHz, Open drain			1
Input Capacitance	Ciss	VDS=-50V,VGS=0V,f=1MHZ		1051		pF
Output Capacitance	Coss	VDS=-50V,VGS=0V,f=1MHZ		399		pF
Reverse Transfer Capacitance	Crss	VDS=-50V,VGS=0V,f=1MHZ		18		pF
Total Gate Charge	Qg	VGS=10V,VDS=50V,ID=25A		16		nC
Gate-Source Charge	Qgs	VGS=10V,VDS=50V,ID=25A		5.6		nC
Gate-Drain Charge	Qg d	VGS=10V,VDS=50V,ID=25A		2.4		nC
Reverse Recovery Charge	Qrr	IF=20A, di/dt=100A/us		42		nC
Reverse Recovery Time	trr	IF=20A, di/dt=100A/us		39.8		ns
Turn-on Delay Time	tD(on)	VGS=10V,VDD=50V,IDS=25A RGEN=2.2		39.2		ns
Turn-on Rise Time	tr	VGS=10V,VDD=50V,IDS=25A RGEN=2.2		11		ns
Turn-off Delay Time	tD(off)	VGS=10V,VDD=50V,IDS=25A RGEN=2.2		53.2		ns
Turn-off fall Time	tf	VGS=10V,VDD=50V,IDS=25A RGEN=2.2		15.8		ns
Drain-source Voltage	VDS				100	V
Gate-source Voltage	VGS				20	V
Drain Current	ID	Tc=25			40	A
Drain Current	ID	Tc=100			25.3	A
Pulsed Drain Current	IDM				160	A
Avalanche energy	EAS				81	mJ
Total Power Dissipation	PD	Tc=25			60	W
Total Power Dissipation	PD	Tc=100			24	W
Junction and Storage Temperature Range	TJ ,TSTG		-55		+150
Thermal Resistance Junction-to-Ambient	RJA	D t10S		15	20	/W
Thermal Resistance Junction-to-Ambient	RJA	D Steady-State		40	50	/W
Thermal Resistance Junction-to-Case	RJC	Steady-State		1.7	2.1	/W