Power semiconductor YANGJIE DGW30N65CTL ideal for motion control systems and AC DC servo drive amplifier

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Product Description

Product Overview

The DGW30N65CTL S-M451D is a high-performance IGBT with low switching losses, maximum junction temperature of 175, positive temperature coefficient, high ruggedness, and excellent short circuit capability (10s). It is designed for applications such as inverters for motor drives, AC/DC servo drive amplifiers, uninterruptible power supplies, and motion/servo control systems.

Product Attributes

Brand: Yangjie
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Maximum Ratings
Collector-Emitter Breakdown Voltage	VCE				650	V DC
Collector Current, limited by Tjmax	IC	TC= 25C			60	A
Collector Current, limited by Tjmax	IC	TC= 100C			30	A
Diode Forward Current, limited by Tjmax	IF	TC= 25C			60	A
Diode Forward Current, limited by Tjmax	IF	TC= 100C			30	A
Continuous Gate-Emitter Voltage	VGE			20		V
Transient Gate-Emitter Voltage (tp10s,D<0.010)	VGE			30		V
Turn off Safe Operating Area		VCE650V, Tj 150C			120	A
Pulsed Collector Current, VGE=15V, tp limited by Tjmax	ICM				120	A
Diode Pulsed Current, tp limited by Tjmax	IFpuls				120	A
Short Circuit Withstand Time, VGE= 15V, VCC=400VVCEM650V	Tsc			10		s
Power Dissipation , Tj=175C,Tc=25C	Ptot				187	W
IGBT Discrete Features
Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ruggedness, temperature stable High short circuit capability(10us)
Circuit Applications
Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Motion/servo control
Collector-Emitter Breakdown Voltage	BVCES	VGE=0V, IC=250A	650	-	-	V
Gate Threshold Voltage	VGE(th)	VGE=VCE, IC=0.43mA	4.1	5.1	6.1	V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=30A Tj=25C		1.85		V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=30A Tj=125C		2.15		V
Collector-Emitter Saturation Voltage	VCE(sat)	VGE=15V, IC=30A Tj=150C		2.25		V
Zero Gate Voltage Collector Current	ICES	VCE=650V, VGE=0V Tj= 25C		1		mA
Zero Gate Voltage Collector Current	ICES	VCE=650V, VGE=0V Tj=150C		5		mA
Gate-Emitter Leakage Current	IGES	VCE= 0V, VGE= 20V			100	nA
Input Capacitance	Cies	VCE= 25V, VGE= 0V, f = 1MHz		1.14		nF
Reverse Transfer Capacitance	Cres			0.05		nF
Gate Charge	QG	VCC=300V,IC=30A, VGE=15V		0.15		uC
Short Circuit Collector Current	ISC	VGE=15V, tsc5us, Vcc=300V,Tj150C		150		A
Operating Junction Temperature	Tj		-40		175	C
Storage Temperature	Ts		-55		150	C
Soldering Temperature, wave soldering		1.6mm (0.063in.) from case for 10s			260	C
Diode Electrical Characteristics
Diode Forward Voltage	VF	IF= 30A Tj= 25C		1.90	2.40	V
Diode Forward Voltage	VF	IF= 30A Tj= 125C		1.80		V
Diode Forward Voltage	VF	IF= 30A Tj= 150C		1.75		V
Switching Characteristic, Inductive Load (IGBT)
Turn-on Delay Time	td(on)	Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		40		ns
Rise Time	tr	Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		72		ns
Turn-on Energy	Eon	Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		0.92		mJ
Turn-off Delay Time	td(off)	Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		120		ns
Fall Time	tf	Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		30		ns
Turn-off Energy	Eoff	Tj= 25, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		0.40		mJ
Turn-on Delay Time	td(on)	Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		45		ns
Rise Time	tr	Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		75		ns
Turn-on Energy	Eon	Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		1.15		mJ
Turn-off Delay Time	td(off)	Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		180		ns
Fall Time	tf	Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		35		ns
Turn-off Energy	Eoff	Tj= 125, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		0.56		mJ
Turn-on Delay Time	td(on)	Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		48		ns
Rise Time	tr	Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		78		ns
Turn-on Energy	Eon	Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		1.35		mJ
Turn-off Delay Time	td(off)	Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		195		ns
Fall Time	tf	Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		38		ns
Turn-off Energy	Eoff	Tj= 150, VCC=300V, IC=30A, VGE= -15v~15V, Rg=15,Ls=60nH		0.68		mJ
Diode Electrical Characteristics (Dynamic)
Reverse Recovery Current	Irr	IF=30A,VR=300V di/dt= -300A/s, Tj= 25		6.0		A
Reverse Recovery Charge	Qrr	IF=30A,VR=300V di/dt= -300A/s, Tj= 25		0.10		uC
Reverse Recovery Energy	Erec	IF=30A,VR=300V di/dt= -300A/s, Tj= 25		0.06		mJ
Reverse Recovery Current	Irr	IF=30A,VR=300V di/dt= -300A/s, Tj= 125		10		A
Reverse Recovery Charge	Qrr	IF=30A,VR=300V di/dt= -300A/s, Tj= 125		0.22		uC
Reverse Recovery Energy	Erec	IF=30A,VR=300V di/dt= -300A/s, Tj= 125		0.09		mJ
Reverse Recovery Current	Irr	IF=30A,VR=300V di/dt= -300A/s, Tj= 150		12		A
Reverse Recovery Charge	Qrr	IF=30A,VR=300V di/dt= -300A/s, Tj= 150		0.26		uC
Reverse Recovery Energy	Erec	IF=30A,VR=300V di/dt= -300A/s, Tj= 150		0.13		mJ
Thermal Resistance
IGBT Thermal Resistance, Junction - Case	Rth(j-c)				0.80	K/W
Diode Thermal Resistance, Junction - Case	Rth(j-c)				1.40	K/W
Thermal Resistance, Junction - Ambient	Rth(j-a)				40	K/W