Industrial Triac WEIDA BTB04-600BW Featuring 4 Amp RMS Current and 600 Volt Repetitive Peak Voltage
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Product Description
Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs
The BTA04/BTB04 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high shock loading capability with a large current capacity. They offer a high dv/dt rate with strong resistance to electromagnetic interference and excellent commutation performance. These 3-quadrant devices are particularly recommended for inductive loads. The BTA04 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards (File ref: E516503), with all three terminals isolated from the heatsink.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Series: BTA04/BTB04 Series
- Certifications: UL (File ref: E516503)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| RMS On-State Current | IT(RMS) | 4 | A | |
| Repetitive Peak Off-State Voltage | VDRM | 600/800 | V | (Tj=25) |
| Repetitive Peak Reverse Voltage | VRRM | 600/800 | V | (Tj=25) |
| Non-Repetitive Surge Peak On-State Current | ITSM | 40 | A | (full cycle, F=50Hz) |
| I2t Value for Fusing | I2t | 8 | As | (tp=10ms) |
| Critical Rate of Rise of On-State Current | dI/dt | 50 | A/s | (IG=2IGT) |
| Peak Gate Current | IGM | 4 | A | |
| Average Gate Power Dissipation | PG(AV) | 1 | W | |
| Peak Gate Power | PGM | 5 | W | |
| Storage Junction Temperature Range | Tstg | -40~150 | ||
| Operating Junction Temperature Range | Tj | -40~125 | ||
| On-State Voltage (Max) | VTM | 1.5 | V | (ITM=5.5A, tp=380s, Tj=25) |
| Off-State Current (Max) | IDRM/IRRM | 5 | A | (VDRM=VRRM, Tj=25) |
| Off-State Current (Max) | IDRM/IRRM | 0.5 | mA | (VDRM=VRRM, Tj=125) |
| Junction to Case Thermal Resistance (AC) | Rth(j-c) | 2.5-3.4 | /W | (Package dependent: TO-220B, TO-220A, TO-220F) |
| Junction to Case Thermal Resistance (AC) | Rth(j-c) | 2.8 | /W | (TO-251-4R/TO-252-4R) |
Electrical Characteristics (Tj=25 unless otherwise specified)
3 Quadrants
| Parameter | Test Condition | Quadrant | Value | Unit |
| Gate Trigger Current | VD=12V, RL=33 | -- | MAX 5 | mA |
| Gate Trigger Current | VD=12V, RL=33 | TW | MAX 10 | mA |
| Gate Trigger Current | VD=12V, RL=33 | SW | MAX 35 | mA |
| Gate Trigger Current | VD=12V, RL=33 | CW | MAX 50 | mA |
| Gate Trigger Current | VD=12V, RL=33 | BW | MAX 50 | mA |
| Gate Trigger Voltage | -- | 1.5 | V | |
| Gate Non-Trigger Voltage | VD=VDRM | -- | MIN 0.2 | V |
| Holding Current | IT=100mA | MAX 6 | mA | |
| Holding Current | IT=100mA | TW | MAX 10 | mA |
| Holding Current | IT=100mA | SW | MAX 35 | mA |
| Holding Current | IT=100mA | CW | MAX 60 | mA |
| Holding Current | IT=100mA | BW | MAX 50 | mA |
| Latching Current | IG=1.2IGT | - | MAX 10 | mA |
| Latching Current | IG=1.2IGT | MAX 15 | mA | |
| Latching Current | IG=1.2IGT | TW | MAX 15 | mA |
| Latching Current | IG=1.2IGT | SW | MAX 50 | mA |
| Latching Current | IG=1.2IGT | CW | MAX 70 | mA |
| Latching Current | IG=1.2IGT | BW | MAX 80 | mA |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | MIN 50 | V/s | |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | TW | MIN 100 | V/s |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | SW | MIN 500 | V/s |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | CW | MIN 1000 | V/s |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | BW | MIN 1000 | V/s |
4 Quadrants
| Parameter | Test Condition | Quadrant | Value | Unit |
| Gate Trigger Current | VD=12V, RL=33 | -- | MAX 25 | mA |
| Gate Trigger Current | VD=12V, RL=33 | C | MAX 50 | mA |
| Gate Trigger Current | VD=12V, RL=33 | B | MAX 70 | mA |
| Gate Trigger Voltage | ALL | 1.5 | V | |
| Gate Non-Trigger Voltage | VD=VDRM | ALL | MIN 0.2 | V |
| Holding Current | IT=100mA | MAX 40 | mA | |
| Holding Current | C | MAX 60 | mA | |
| Holding Current | B | MAX 90 | mA | |
| Latching Current | IG=1.2IGT | -- | MAX 50 | mA |
| Latching Current | IG=1.2IGT | C | MAX 70 | mA |
| Latching Current | IG=1.2IGT | B | MAX 90 | mA |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | MIN 200 | V/s | |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | C | MIN 500 | V/s |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | B | MIN 500 | V/s |
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