IGBT module YANGJIE MG200HF12TFC2 featuring low switching losses and high short circuit capability

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Product Description

Product Overview

The MG200HF12TFC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses, a positive temperature coefficient for Vce(sat), and high short-circuit capability. The module includes an ultra-fast and soft recovery anti-parallel FWD, a low inductance package, and a maximum junction temperature of 175.

Product Attributes

Brand: Yangjie
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
IGBT Absolute Maximum Ratings
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25	1200	V
Continuous Collector Current	IC	Tc=100	200	A
Repetitive Peak Collector Current	ICRM	tp=1ms	400	A
Gate-Emitter Voltage	VGES	Tvj=25	±20	V
Total Power Dissipation	Ptot	Tc=25, Tvjmax=175	1250	W
IGBT Characteristic Values
Gate-emitter Threshold Voltage	VGE(th)	VGE=VCE, IC =7.6mA,Tvj=25	5.0, 5.8, 6.6	V
Collector-Emitter Cut-off Current	ICES	VCE=1200V,VGE=0V,Tvj=25	1.0	mA
Collector-Emitter Saturation Voltage	VCE(sat)	Ic=200A,VGE=15V, Tvj=25	2.10, 2.40	V
Collector-Emitter Saturation Voltage	VCE(sat)	Ic=200A,VGE=15V, Tvj=125	2.45	V
Gate Charge	QG		1.2	uC
Input Capacitance	Cies	VCE=25V, VGE =0V, f=1MHz,Tvj=25	12.8	nF
Reverse Transfer Capacitance	Cres		0.5	nF
Gate-Emitter leakage current	IGES	VCE=0 V, VGE=20V,Tvj = 25	400	nA
Turn-on Delay Time	td(on)	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25	290	ns
Rise Time	tr	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25	50	ns
Turn-off Delay Time	td(off)	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25	330	ns
Fall Time	tf	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25	72	ns
Energy Dissipation During Turn-on Time	Eon	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25	12.4	mJ
Energy Dissipation During Turn-off Time	Eoff	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25	9.4	mJ
Turn-on Delay Time	td(on)	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125	340	ns
Rise Time	tr	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125	60	ns
Turn-off Delay Time	td(off)	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125	460	ns
Fall Time	tf	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125	75	ns
Energy Dissipation During Turn-on Time	Eon	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125	18.0	mJ
Energy Dissipation During Turn-off Time	Eoff	IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125	14.2	mJ
SC Data	Isc	Tp≤10us,VGE=15V, Tvj=150,Vcc=900V, VCEM≤1200V	1100	A
Diode Absolute Maximum Ratings
Repetitive Peak Reverse Voltage	VRRM	Tvj=25	1200	V
Continuous DC Forward Current	IF		200	A
Repetitive Peak Forward Current	IFRM	tp=1ms	400	A
Diode Characteristic Values
Forward Voltage	VF	IF=200A,Tvj=25	2.10, 2.60	V
Forward Voltage	VF	IF=200A,Tvj=125	2.10	V
Recovered Charge	Qrr	IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25	14.2	uC
Peak Reverse Recovery Current	Irr	IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25	155	A
Reverse Recovery Energy	Erec	IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25	9.0	mJ
Recovered Charge	Qrr	IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125	27.5	uC
Peak Reverse Recovery Current	Irr	IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125	176	A
Reverse Recovery Energy	Erec	IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125	13.8	mJ
Module Characteristics
Isolation voltage	Visol	t=1min,f=50Hz	2500	V
Maximum Junction Temperature	Tjmax		175
Operating Junction Temperature	Tvj op		-40, 150
Storage Temperature	Tstg		-40, 125
Thermal Resistance Junction-to Case	RJC	per IGBT	0.12	K/W
Thermal Resistance Junction-to Case	RJC	per Diode	0.20	K/W
Thermal Resistance Case-to Sink	RCS	Conductive grease applied	0.046	K/W
Module Electrodes Torque	Mt	Recommended(M6)	3.0, 5.0	N·m
Module-to-Sink Torque	Ms	Recommended(M6)	3.0, 5.0	N·m
Weight of Module	G		315	g