IGBT module YANGJIE MG150HF12LEC2 featuring low switching losses and high short circuit capability for industrial
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Product Description
Product Overview
The MG150HF12LEC2 S-M338 is a high-speed IGBT module featuring NPT technology, designed for applications requiring high frequency drivers, solar inverters, UPS, and electric welding machines. It offers low switching losses, high short circuit capability, and includes an ultra-fast & soft recovery anti-parallel FWD. The module boasts low inductance and a maximum junction temperature of 150.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
- Origin: China (implied by website)
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | Tc=80 | 150 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 300 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V |
| Total Power Dissipation | Ptot | Tc=25, Tvjmax=150 | 960 | W |
| IGBT Characteristic Values | ||||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =6mA,Tvj=25 | 5.0 - 6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=25 | 3.4 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=125 | 3.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=150 | 4.15 | V |
| Gate Charge | QG | 2.86 | uC | |
| Input Capacitance | Cies | VCE=25V,VGE=0V, f=1MHz,Tvj=25 | 9.8 | nF |
| Reverse Transfer Capacitance | Cres | 0.6 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj=25 | 400 | nA |
| Turn-on Delay Time | td(on) | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 137 | ns |
| Rise Time | tr | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 115 | ns |
| Turn-off Delay Time | td(off) | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 390 | ns |
| Fall Time | tf | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 33 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 23.3 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 5.1 | mJ |
| Turn-on Delay Time | td(on) | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 133 | ns |
| Rise Time | tr | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 106 | ns |
| Turn-off Delay Time | td(off) | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 426 | ns |
| Fall Time | tf | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 77 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 29.5 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 9.1 | mJ |
| SC Data | Isc | tp10us,VGE=15V,Tvj=150, VCC=600V,VCEM1200V | 450 | A |
| Diode Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 150 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 300 | A |
| Diode Characteristic Values | ||||
| Forward Voltage | VF | IF=150A,Tvj=25 | 2.05 - 2.80 | V |
| Forward Voltage | VF | IF=150A,Tvj=125 | 1.90 | V |
| Forward Voltage | VF | IF=150A,Tvj=150 | 1.80 | V |
| Recovered Charge | Qrr | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=25 | 7.87 | uC |
| Peak Reverse Recovery Current | Irr | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=25 | 34 | A |
| Reverse Recovery Energy | Erec | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=25 | 2.44 | mJ |
| Recovered Charge | Qrr | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=150 | 26.16 | uC |
| Peak Reverse Recovery Current | Irr | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=150 | 71 | A |
| Reverse Recovery Energy | Erec | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=150 | 9.2 | mJ |
| Module Characteristics | ||||
| Isolation Voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 150 | ||
| Operating Junction Temperature | Tvj op | -40 - 125 | ||
| Storage Temperature | Tstg | -40 - 125 | ||
| Thermal Resistance Junction to Case | RJC | per IGBT | 0.13 | K/W |
| Thermal Resistance Junction to Case | RJC | per Diode | 0.33 | K/W |
| Thermal Resistance Case to Sink | RCS | Conductive grease applied | 0.012 - 0.035 | K/W |
| Module Electrodes Torque | Mt | Recommended(M6) | 3.0 - 5.0 | Nm |
| Module-to-Sink Torque | Ms | Recommended(M6) | 3.0 - 5.0 | Nm |
| Weight of Module | G | 315 | g | |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina