Durable WEIDA BTB26-800CW Triac 25A 800V RMS On State Current with Superior Shock Loading Resistance

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Product Description

Jiangsu Weida Semiconductor Co., Ltd. BTA26/BTB26 Series 25A Triacs

The BTA26/BTB26 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high current shock loading with excellent resistance to electromagnetic interference and high dv/dt rates. They offer superior commutation performance, making them particularly suitable for inductive loads. The BTA26 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Series: BTA26/BTB26
Certifications: UL (File ref: E516503)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
RMS On-State Current	IT(RMS)	25	A
Repetitive Peak Off-State Voltage	VDRM	600/800/1200/1600	V
Repetitive Peak Reverse Voltage	VRRM	600/800/1200	V
On-State Voltage (Max)	VTM	1.5	V	ITM=35A, tp=380s, Tj=25
Non-Repetitive Surge Peak On-State Current	ITSM	250	A	Full cycle, F=50Hz
I2t Value for Fusing	I2t	340	A2s	tp=10ms
Critical Rate of Rise of On-State Current	dI/dt	50	A/s	IG=2IGT
Peak Gate Current	IGM	4	A
Average Gate Power Dissipation	PG(AV)	1	W
Peak Gate Power	PGM	10	W
Storage Junction Temperature Range	Tstg	-40~150
Operating Junction Temperature Range	Tj	-40~125
Off-State Leakage Current	IDRM/IRRM	10 (Tj=25) / 3 (Tj=125)	A	VDRM=VRRM
Gate Trigger Current (Max)	IGT	25 to 70	mA	See Electrical Characteristics for Quadrant details
Gate Trigger Voltage (Max)	VGT	1.3 to 1.5	V
Holding Current (Max)	IH	60 to 100	mA	See Electrical Characteristics for Quadrant details
Latching Current (Max)	IL	70 to 100	mA	See Electrical Characteristics for Quadrant details
Critical Rate of Rise of Off-State Voltage	dV/dt	200 to 1500	V/s	Gate open, Tj=125
Junction to Case Thermal Resistance (AC)	Rth(j-c)	1.0 to 2.1	/W	Package dependent