Power MOSFET TWGMC SI2302B designed for load switching in DC DC converters and portable electronic devices

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SI2302B is a Trench FET Power MOSFET designed for load switching in portable devices, DC-DC converters, and other applications. It offers efficient power management with its robust design and reliable performance.

Product Attributes

Brand: GMC (implied by www.tw-gmc.com)
Package: SOT-23 Plastic-Encapsulate MOSFET
Origin: Taiwan (implied by tw-gmc.com)

Technical Specifications

Model	Parameter	Value	Unit	Test Conditions
SI2302B	Drain-Source Breakdown Voltage (V(BR)DSS)	20	V	VGS=0, ID=250A
	Gate-Threshold Voltage (VGS(th))	0.6 - 1.1	V	VDS= VGS, ID=250A
	Collector Cut-off Current (IGSS)	100	nA	VDS=0, VGS=10V
	Collector Cut-off Current (IDSS)	1	A	VDS=20V, VGS=0V
	Drain-Source On-Resistance (RDS(on))	45 - 55	m	VGS=4.5V, ID=2A
	Drain-Source On-Resistance (RDS(on))	60 - 80	m	VGS=2.5V, ID=1A
	Forward Transconductance (gFS)	10	S	VDS=5V, ID=2.3A
	Diode Forward Voltage (VSD)	1.2	V	IS=1A,VGS=0V
	Total Gate Charge (Qg)	5.0 - 10	nC	VDS=10V, VGS=4.5V, ID=2.3A
	Gate-Source Charge (Qgs)	0.65
	Gate-Drain Charge (Qgd)	1.5
	Input Capacitance (Ciss)	340	pF	VDS=10V, VGS=0V, f=1MHz
	Output Capacitance (Coss)	120	pF	VDS=10V, VGS=0V, f=1MHz
SI2302B	Reverse Transfer Capacitance (Crss)	80	pF	VDS=10V, VGS=0V, f=1MHz
SI2302B	Turn-on Delay Time (td(on))	12	nS	VDS=10V, RL=5.5, ID2.5A, VGEN=4.5V, Rg=6
SI2302B	Rise Time (tr)	36	nS	VDS=10V, RL=5.5, ID2.5A, VGEN=4.5V, Rg=6
SI2302B	Turn-off Delay Time (td(off))	34	nS	VDS=10V, RL=5.5, ID2.5A, VGEN=4.5V, Rg=6
SI2302B	Fall Time (tf)	10	nS	VDS=10V, RL=5.5, ID2.5A, VGEN=4.5V, Rg=6
Absolute Maximum Ratings	Drain-Source Voltage (VDS)	20	V	Ta=25
	Gate-Source Voltage (VGS)	10	V	Ta=25
	Continuous Drain Current (ID)	2.3	A	Ta=25
	Continuous Source-Drain Current (IS)	0.6	A	Diode Conduction, Ta=25
	Power Dissipation (PD)	400	mW	Ta=25
	Thermal Resistance (RJA)	300	/W	Junction To Ambient (t5s)
	Operation Junction and Storage Temperature Range (TJ, Tstg)	-55+150