High Shock Load 12A Triac WEIDA BTB12-800CW with 800V Voltage Rating and Electromagnetic Resistance
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Product Description
Product Overview
The Jiangsu Weida Semiconductor BTA12/BTB12 Series 12A Triacs are designed for high shock loading capability with excellent resistance to electromagnetic interference and high dv/dt rates. These triacs offer superior commutation performance, making the 3-quadrant versions particularly suitable for inductive loads. The BTA12 series provides a rated insulation voltage of 2500 VRMS, compliant with UL standards (File ref: E516503), ensuring safety and reliability.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Series: BTA12/BTB12
- Certifications: UL (File ref: E516503)
Technical Specifications
| Parameter | Symbol | Unit | Value | Notes |
| Repetitive peak off-state voltage | VDRM/VRRM | V | 600 | (Tj=25) |
| 800 | (Tj=25) | |||
| 1200 | (Tj=25) | |||
| RMS on-state current | IT(RMS) | A | 12 | |
| On-state voltage | VTM | V | 1.5 | ITM=17A, tp=380s, Tj=25 |
| Storage junction temperature range | Tstg | -40~150 | ||
| Operating junction temperature range | Tj | -40~125 | ||
| Non repetitive surge peak on-state current | ITSM | A | 120 | (full cycle, F=50Hz) |
| I2t value for fusing | I2t | As | 78 | (tp=10ms) |
| Critical rate of rise of on-state current | dI/dt | A/s | 50 | (IG=2IGT) |
| Peak gate current | IGM | A | 4 | |
| Average gate power dissipation | PG(AV) | W | 1 | |
| Peak gate power | PGM | W | 5 | |
| Gate Trigger Current | IGT | mA | MAX 5 | Quadrant I-II-III, VD=12V, RL=33 (3-Quadrant) |
| MAX 25 | Quadrant I-II-III, VD=12V, RL=33 (4-Quadrant) | |||
| MAX 35 | Quadrant I-II-III, VD=12V, RL=33 (3-Quadrant) | |||
| MAX 50 | Quadrant I-II-III, VD=12V, RL=33 (3-Quadrant) | |||
| Gate Trigger Voltage | VGT | V | 1.5 | (3-Quadrant) |
| ALL (4-Quadrant) | ||||
| Gate Non-Trigger Voltage | VGD | V | MIN 0.2 | (3-Quadrant) |
| ALL (4-Quadrant) | ||||
| Holding Current | IH | mA | MAX 5 | Quadrant I-III, IT=100mA (3-Quadrant) |
| MAX 20 | Quadrant II, IG=1.2IGT (3-Quadrant) | |||
| MAX 40 | Quadrant I-III, IT=100mA (4-Quadrant) | |||
| MAX 70 | Quadrant II, IG=1.2IGT (4-Quadrant) | |||
| Latching Current | IL | mA | MAX 20 | Quadrant I-III, IG=1.2IGT (3-Quadrant) |
| MAX 30 | Quadrant II, IG=1.2IGT (3-Quadrant) | |||
| MAX 50 | Quadrant I-III, IG=1.2IGT (4-Quadrant) | |||
| MAX 70 | Quadrant II, IG=1.2IGT (4-Quadrant) | |||
| Critical dV/dt | dV/dt | V/s | MIN 100 | VD=2/3VDRM, Tj=125, Gate open (3-Quadrant) |
| MIN 200 | VD=2/3VDRM, Tj=125, Gate open (4-Quadrant) | |||
| Off-state current | IDRM/IRRM | A | MAX 5 | VDRM=VRRM, Tj=25 |
| Off-state current | IDRM/IRRM | mA | 1 | VDRM=VRRM, Tj=125 |
| Thermal Resistance (junction to case) | Rth(j-c) | /W | 2.3 | TO-220A (Insulated) |
| 1.5 | TO-220B (Non-Insulated) | |||
| 2.5 | TO-220F (Insulated) | |||
| 1.5 | TO-263 |
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