power transistor YANGJIE DGW75N65CTS2A IGBT suitable for resonant and welding converter applications
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Product Description
Product Overview
The DGW75N65CTS2A is a high-speed IGBT designed for hard and soft switching applications. It features a maximum junction temperature of 175C, a positive temperature coefficient, and high ruggedness for stable temperature performance. This device is ideal for resonant converters, uninterruptible power supplies, welding converters, and mid to high range switching frequency converters.
Product Attributes
- Brand: Yangjie
- Model: DGW75N65CTS2A S-M384D
- Certifications: RoHS Compliant
- Revision: 2.0
- Date: 28-Jul-23
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 85 | A | ||
| Collector Current, limited by bondwire | IC | TC= 100C | 80 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 85 | A | ||
| Diode Forward Current, limited by bondwire | IF | TC= 100C | 80 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage | VGE | (tp10s,D<0.010) | 30 | V | ||
| Turn off Safe Operating Area | VCE 650V, Tj 150C | 300 | A | |||
| Pulsed Collector Current | ICM | VGE=15V, tp limited by Tjmax | 300 | A | ||
| Diode Pulsed Current | IFpuls | tp limited by Tjmax | 300 | A | ||
| Power Dissipation | Ptot | Tj=175C,Tc=25C | 428 | W | ||
| IGBT Discrete Features | ||||||
| High speed smooth switching device for hard & soft switching | ||||||
| Maximum junction temperature | 175 | |||||
| Positive temperature coefficient | ||||||
| High ruggedness, temperature stable | ||||||
| Circuit Applications | ||||||
| Resonant converters | ||||||
| Uninterruptible power supplies | ||||||
| Welding converters | ||||||
| Mid to high range switching frequency converters | ||||||
| IGBT Electrical Characteristics | (Tj= 25 unless otherwise specified) | |||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 650 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=0.75mA | 3.2 | 4.0 | 4.8 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A Tj=25C | - | 1.10 | 1.45 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A Tj=125C | - | 1.60 | 1.70 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A Tj=150C | - | 1.75 | - | V |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V Tj= 25C | - | 0.25 | - | mA |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V Tj=150C | - | - | 3.00 | mA |
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | - | - | 100 | nA |
| IGBT Dynamic Characteristics | ||||||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | - | 4.75 | - | nF |
| Reverse Transfer Capacitance | Cres | - | 0.04 | - | nF | |
| Gate Charge | QG | VCC=520V,IC=75A, VGE=15V | - | 0.18 | - | uC |
| Diode Electrical Characteristics | ||||||
| Static Diode Forward Voltage | VF | IF= 75A Tj= 25C | - | 1.75 | 2.20 | V |
| Static Diode Forward Voltage | VF | IF= 75A Tj= 125C | - | 1.65 | - | V |
| Static Diode Forward Voltage | VF | IF= 75A Tj= 150C | - | 1.60 | - | V |
| Diode Dynamic Characteristics | (at Tj= 25) | |||||
| Reverse Recovery Current | Irr | IF=75A,VR=400V, -di/dt=440A/s | - | 10 | - | A |
| Reverse Recovery Charge | Qrr | - | 0.98 | - | uC | |
| Diode reverse recovery time | trr | - | 160 | - | ns | |
| Reverse Recovery Energy | Erec | - | 0.14 | - | mJ | |
| Diode Dynamic Characteristics | (at Tj= 125) | |||||
| Reverse Recovery Current | Irr | IF=75A,VR=400V, -di/dt=440A/s | - | 17 | - | A |
| Reverse Recovery Charge | Qrr | - | 2.97 | - | uC | |
| Diode reverse recovery time | trr | - | 188 | - | ns | |
| Reverse Recovery Energy | Erec | - | 0.47 | - | mJ | |
| Diode Dynamic Characteristics | (at Tj= 150) | |||||
| Reverse Recovery Current | Irr | IF=75A,VR=400V, -di/dt=440A/s | - | 20 | - | A |
| Reverse Recovery Charge | Qrr | - | 3.26 | - | uC | |
| Diode reverse recovery time | trr | - | 212 | - | ns | |
| Reverse Recovery Energy | Erec | - | 0.54 | - | mJ | |
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 0.35 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 0.45 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 40 | K/W | |||
| Operating Conditions | ||||||
| Operating Junction Temperature | Tj | -40 | +175 | C | ||
| Storage Temperature | Ts | -55 | +150 | C | ||
| Soldering Temperature, wave soldering | 1.6mm (0.063in.) from case for 10s | 260 | C | |||
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