High DC Current Gain Willsemi WPT2N41-8TR PNP Bipolar Power Transistor in Compact PDFN3x2-8L Package

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Product Description

Product Overview

The WPT2N41 is a single, PNP bipolar power transistor from Will Semiconductor Ltd. featuring a very low saturation voltage. It is designed for applications such as charging circuits and power management, particularly in portable equipment. This device offers high DC current gain and a continuous collector current of 3A, all within a compact PDFN3x2-8L package.

Product Attributes

Brand: Will Semiconductor Ltd.
Product Code: WPT2N41
Certification: Pb-free

Technical Specifications

Parameter	Symbol	Value	Unit	Test Conditions
Collector-emitter voltage	VCEO	-32	V
Collector-base voltage	VCBO	-45	V
Emitter-base voltage	VEBO	-6	V
Continuous collector current (a)	IC	-3	A
Continuous collector current (b)	IC	-2	A
Pulse collector current	ICM	-6	A
Power dissipation (a)	PD	3	W
Power dissipation (b)	PD	1.7	W
Junction Temperature	TJ	150	C
Lead Temperature	TL	260	C
Storage Temperature Range	Tstg	-55155	C
Collector-emitter breakdown voltage	BVCEO	-32	V	Ic=-10mA, lB=0mA
Collector-base breakdown voltage	BVCBO	-45	V	lc=-100uA, lE=0mA
Emitter-base breakdown voltage	BVEBO	-6	V	IE=-100uA, lc=0mA
Collector cutoff current	ICBO	-100	nA	VCB=-40V
Emitter cutoff current	IEBO	-100	nA	VEB=-5V
Collector-emitter saturation voltage (c)	Vce(sat)	-0.2 to -0.5	mV	IC=-2A, lB=-200mA
Base-emitter saturation voltage (c)	Vbe(sat)	-1.0 to -1.5	V	IC=-2A, lB=-200mA
DC current gain (c)	HFE	100 to 320		lC=-1A , VCE=-2V
Junction-to-Ambient Thermal Resistance (a)	RJA	42	C/W	t 10 s
Junction-to-Ambient Thermal Resistance (b)	RJA	70	C/W	t 10 s
Junction-to-Case Thermal Resistance (d)	RJC	15	C/W	Steady State