Low voltage N channel Multi EPI Super Junction power MOSFET XCH GSD11N65E with fast switching and low on resistance
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Product Description
Product Overview
The GSx11N65E is a low-voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. Designed with advanced technology, it offers enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This series is suitable for voltage applications up to 1000 volts.
Product Attributes
- Brand: XCH Semiconductor
- Series: Multi-EPI Super-Junction
- Channel Type: N-channel
Technical Specifications
| Symbol | Parameter | GSA11N65E | GSD11N65E | Unit |
| VDSS | Drain-Source Voltage | 650 | 650 | V |
| ID | Drain Current -Continuous (TC = 25) | 11* | 11* | A |
| ID | Drain Current -Continuous (TC = 100) | 7* | 7* | A |
| IDM | Drain Current - Pulsed | 42 | 42 | A |
| VGSS | Gate-Source voltage | 30 | 30 | V |
| EAS | Single Pulsed Avalanche Energy | 260 | 260 | mJ |
| IAR | Avalanche Current | 2 | 2 | A |
| EAR | Repetitive Avalanche Energy | 1 | 1 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 15 | 15 | V/ns |
| dVds/dt | Drain Source voltage slope (Vds=480V) | 50 | 50 | V/ns |
| PD | Power Dissipation (TC = 25) | 31 | 31 | W |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | -55 to +150 | |
| TL | Max. Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds | 300 | 300 | |
| RJC | Thermal Resistance, Junction-to-Case | 4.0 | 1.3 | /W |
| RCS | Thermal Resistance, Case-to-Sink | -- | 0.5 | /W |
| RJA | Thermal Resistance, Junction-to-Ambient | 80 | 62 | /W |
| BVDSS | Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A, TJ = 25) | 650 | 650 | V |
| BVDSS | Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A, TJ = 150) | - | 700 | V |
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient (ID = 250A, Referenced to 25) | - | 0.6 | V/ |
| IDSS | Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) | - | 10 | A |
| IDSS | Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TJ = 150) | - | 1 | A |
| IGSSF | Gate-Body Leakage Current, Forward (VGS = 30V, VDS = 0V) | - | 100 | nA |
| IGSSR | Gate-Body Leakage Current, Reverse (VGS = -30V, VDS = 0V) | - | -100 | nA |
| VGS(th) | Gate Threshold Voltage (VDS = VGS, ID = 250A) | 2.5 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance (VGS = 10V, ID = 5.5A) | 0.42 | 0.42 | |
| gFS | Forward Transconductance (VDS = 40V, ID = 5.5A) | 16 | 16 | S |
| Ciss | Input Capacitance (VDS = 25V, VGS = 0V, f = 1.0MHz) | 720 | 720 | pF |
| Coss | Output Capacitance | 20 | 20 | pF |
| Crss | Reverse Transfer Capacitance | 1.5 | 1.5 | pF |
| td(on) | Turn-On Delay Time (VDD = 400V, ID = 5.5A, RG = 20) | 15 | 15 | ns |
| tr | Turn-On Rise Time | 10 | 10 | ns |
| td(off) | Turn-Off Delay Time | 110 | 110 | ns |
| tf | Turn-Off Fall Time | 9 | 9 | ns |
| Qg | Total Gate Charge (VDS = 400V, ID = 5.5A, VGS = 10V) | 32 | 32 | nC |
| Qgs | Gate-Source Charge | 4 | 4 | nC |
| Qgd | Gate-Drain Charge | 16 | 16 | nC |
| IS | Maximum Continuous Drain-Source Diode Forward Current | 9.2 | 9.2 | A |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 30 | 30 | A |
| VSD | Drain-Source Diode Forward Voltage (VGS = 0V, IS = 5.5A) | 1.5 | 1.5 | V |
| trr | Reverse Recovery Time (VGS = 0V, IS = 5.5A, dIF/dt =100A/s) | 280 | 280 | ns |
| Qrr | Reverse Recovery Charge | 3.3 | 3.3 | C |
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