Silicon PNP Transistor UTC 2SB1260G-Q-AB3-R with High Current and Low Saturation Voltage Performance
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Product Description
Product Overview
The UTC 2SB1260 is an epitaxial planar type PNP silicon transistor designed for high breakdown voltage and high current applications. It offers good hFE linearity and low VCE(SAT), making it suitable for various power transistor needs.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Origin: Taiwan (implied by www.unisonic.com.tw)
Technical Specifications
| Parameter | Symbol | SOT-89 | TO-252 | Unit | Conditions |
| Collector-Base Voltage | VCBO | -80 | V | ||
| Collector-Emitter Voltage | VCEO | -80 | V | ||
| Emitter-Base Voltage | VEBO | -5 | V | ||
| Peak Collector Current | ICM | -2 | A | (single pulse, Pw=100ms) | |
| DC Collector Current | IC | -1 | A | ||
| Power Dissipation | PD | 0.5 | 1.9 | W | (TA=25C, Note 1) |
| Junction Temperature | TJ | +150 | |||
| Storage Temperature | TSTG | -40 ~ +150 | |||
| Collector Base Breakdown Voltage | BVCBO | -80 | V | IC= -50A | |
| Collector Emitter Breakdown Voltage | BVCEO | -80 | V | IC= -1mA | |
| Emitter Base Breakdown Voltage | BVEBO | -5 | V | IE= -50A | |
| Collector Cut-Off Current | ICBO | -1 | A | VCB=-60V | |
| Emitter Cut-Off Current | IEBO | -1 | A | VEB=-4V | |
| DC Current Gain | hFE | 82 ~ 390 | VCE=-3V, IOUT=-0.1A (Note 1) | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.4 | V | IC=-500mA, IB=-50mA | |
| Transition Frequency | fT | 100 | MHz | VCE= -5V, IE=50mA, f=30MHz | |
| Output Capacitance | Cob | 25 | pF | VCB=-10V, IE=0, f=1MHz | |
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