Power MOSFET Winsok Semicon WSD70N06GDN33 with 100 percent EAS guaranteed and RoHS compliant design
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The WSD70N06GDN33 is a high-performance N-Channel SGT MOSFET featuring extreme cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. This MOSFET is ideal for power management in industrial DC/DC converters and high-frequency switching applications.
Product Attributes
- Brand: Winsok
- Certifications: RoHS Compliant, Green Devices Available
- Testing: 100% UIS Tested, 100% EAS guaranteed
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | --- | --- | V |
| VGS=0V , ID=250A | 60 | --- | --- | V | ||
| VGS=0V , ID=250A | 60 | --- | --- | V | ||
| Static Drain-Source On-Resistance | RDS ON | VGS=10V , ID=20A | --- | 7.5 | 10 | m |
| VGS=10V , ID=20A, TJ=125C | --- | 15 | --- | m | ||
| VGS=4.5V , ID=15A | --- | 10 | 13 | V | ||
| Gate Threshold Voltage | VGS th | VGS=VDS , ID=250A | 1.2 | 1.5 | 2.5 | V |
| VGS=VDS , ID=250A | 1.2 | 1.5 | 2.5 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=60V , VGS=0V | --- | --- | 1.0 | A |
| VDS=60V , VGS=0V, TJ=55C | --- | --- | 5.0 | A | ||
| Gate-Source Leakage Current | IGSS | VDS=0V , VGS=20V | --- | --- | 100 | nA |
| Forward Transconductance | gfs | VDS=5V , ID=1A | --- | 50 | --- | S |
| Gate Resistance | RG | =1.0MHz | --- | --- | 5.0 | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=10A | --- | 17 | --- | nC |
| VDS=50V , VGS=10V , ID=10A | --- | 17 | --- | nC | ||
| VDS=50V , VGS=10V , ID=10A | --- | 17 | --- | nC | ||
| Gate-Source Charge | Qgs | --- | 3.5 | --- | ||
| Gate-Drain Charge | Qgd | --- | 3.3 | --- | ||
| Turn-On Delay Time | Td on | VDD=50V , VGS=10V , ID=20A RL=1 , RGEN=2 | --- | 18 | --- | ns |
| VDD=50V , VGS=10V , ID=20A RL=1 , RGEN=2 | --- | 18 | --- | ns | ||
| Rise Time | Tr | --- | 4.1 | --- | ||
| Turn-Off Delay Time | Td off | --- | 35 | --- | ||
| Fall Time | Tf | --- | 5.7 | --- | ||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , =1.0MHz | --- | 1150 | --- | pF |
| VDS=50V , VGS=0V , =1.0MHz | --- | 1150 | --- | pF | ||
| VDS=50V , VGS=0V , =1.0MHz | --- | 1150 | --- | pF | ||
| Output Capacitance | Coss | VDS=50V , VGS=0V , =1.0MHz | --- | 200 | --- | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , =1.0MHz | --- | 5.2 | --- | pF |
| Continuous Source Current | IS | --- | --- | 70 | A | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | --- | 0.7 | 1.2 | V |
| Reverse Recovery Time | trr | IF=10A , di/dt=500A/s | --- | 42 | --- | ns |
| Reverse Recovery Charge | Qrr | IF=10A , di/dt=500A/s | --- | 35 | --- | nC |
| Continuous Drain Current | ID | TC=25C | --- | --- | 70 | A |
| TC=100C | --- | --- | 35 | A | ||
| TC=25C | --- | --- | 70 | A | ||
| Pulse Drain Current | IDM | --- | --- | 100 | A | |
| Power Dissipation | PD | TC=25C | --- | --- | 65 | W |
| TC=25C | --- | --- | 65 | W | ||
| Single pulse Avalanche Current | IAS | --- | --- | 25 | A | |
| Single pulse Avalanche Energy | EAS | L=0.5mH | --- | --- | 30 | mJ |
| Storage Temperature Range | TSTG | -55 | --- | 150 | C | |
| Operating Junction Temperature Range | TJ | -55 | --- | 150 | C | |
| Thermal Resistance-Junction to Ambient | RJA | t10s | --- | --- | 30 | C/W |
| Steady State | --- | --- | 82 | C/W | ||
| Thermal Resistance-Junction to Case | RJC | --- | --- | 2.1 | C/W |
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Sellina