switching NPN planar transistor UTC 2SD1816G-R-TF3-T featuring slim package and performance for electronics

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Product Description

Product Overview

The UNISONIC TECHNOLOGIES CO., LTD 2SD1816 is an NPN planar transistor designed for high current switching applications. It features low collector-to-emitter saturation voltage, good linearity of hFE, a small and slim package for compactness, high fT, and fast switching speed. This makes it suitable for various electronic sets requiring efficient and rapid switching.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Product Type: NPN Planar Transistor
Certifications: Lead Free, Halogen Free

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Collector-Base Breakdown Voltage	BVCBO	120	V	IC =10A, IE =0
Collector-Emitter Breakdown Voltage	BVCEO	100	V	IC =1mA, RB=
Emitter-Base Breakdown Voltage	BVEBO	6	V	IE =10A, IC=0
Base-Emitter Saturation Voltage	VBE(SAT)	0.9 - 1.2	V	IC = 2A, IB =0.2A
Collector-Emitter Saturation Voltage	VCE(SAT)	150 - 400	mV	IC = 2A, IB=0.2A
Collector Cut-Off Current	ICBO	1	A	VCB = 100 V, IE =0
Emitter Cut-Off Current	IEBO	1	A	VEB = 4V, IC=0
DC Current Transfer Ratio (hFE1)	hFE1	70 - 560		VCE = 5V, IC = 0.5A
DC Current Transfer Ratio (hFE2)	hFE2	40		VCE =5V, IC = 3A
Transition Frequency	fT	180	MHz	VCE =10V, IC =0.5A
Output Capacitance	Cob	40	pF	VCB =10V, IE =0A, f =1MHz
Turn-on Time	tON	100	ns	See test circuit
Storage Time	tSTG	900	ns	See test circuit
Fall Time	tF	50	ns	See test circuit
Collector Current (DC)	IC	4	A
Collector Current (PULSE)	IC	8	A	(Note 2)
Collector Power Dissipation (TO-220/TO-220F/TO-220F1)	PD	2	W
Collector Power Dissipation (TO-251/TO-251S/TO-252)	PD	1	W
Junction Temperature	TJ	+150	C
Storage Temperature	TSTG	-40 ~ +150	C