High voltage NPN transistor UTC 2SC1623G-L6-AE3-R suitable for audio frequency amplifier applications

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Product Description

Product Overview

The UTC 2SC1623 is a NPN silicon transistor utilizing UTC's advanced technology. It offers high DC current gain and high breakdown voltage, making it suitable for general-purpose amplifier applications in audio frequency circuits.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: NPN SILICON TRANSISTOR
Certifications: Lead Free, Halogen Free

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector to Base Voltage	VCBO				60	V
Collector to Emitter Voltage	VCEO				50	V
Emitter to Base Voltage	VEBO				5.0	V
Collector Current (DC)	IC				100	mA
Power Dissipation	PD				200	mW
Junction Temperature	TJ				+150	C
Storage Temperature	TSTG		-55		+150	C
Collector Cutoff Current	ICBO	VCB=60V, IE=0			0.1	A
Emitter Cutoff Current	IEBO	VEB=5.0V, IC=0			0.1	A
DC Current Gain	hFE	VCE=6.0V, IC=1.0mA (Note 1)	90		600
Collector Saturation Voltage	VCE(SAT)	IC=100mA, IB=10mA (Note 1)			0.3	V
Base to Saturation Voltage	VBE(SAT)	IC=100mA, IB= 10mA (Note 1)			1.0	V
Base Emitter Voltage	VBE	VCE=6.0V, IC=1.0mA (Note 1)	0.55		0.7	V
Gain Bandwidth Product	fT	VCE= 6.0V, IE=-10mA		250		MHz
Output Capacitance	COB	VCB= 6.0V, IE=0, f=1.0MHz			3.0	pF