Power MOSFET Silicon N Channel XCH 4N65M with TO 251 Package Offering Improved Switching Performance

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Product Description

Product Overview

This Silicon N-Channel Enhanced VDMOSFET is manufactured using self-aligned planar technology, leading to reduced conduction losses, improved switching performance, and enhanced avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device comes in a TO-251 package and complies with RoHS standards.

Product Attributes

Brand: XCH4N65M
Material: Silicon N-Channel Power MOSFET
Package: TO-251
Certifications: RoHS

Technical Specifications

Symbol	Parameter	Test Conditions	Rating	Units	Min.	Typ.	Max.
OFF Characteristics	Drain to Source Breakdown Voltage	VGS=0V, ID=250A	650	V
	Bvdss Temperature Coefficient	ID=250uA,Reference25				0.67		V/
	Drain to Source Leakage Current	VDS=650V,VGS=0V,Ta=25					1	A
	Drain to Source Leakage Current	VDS=520V, VGS=0V,Ta=125					100	A
	Gate to Source Forward Leakage	VGS=+30V					100	nA
	Gate to Source Reverse Leakage	VGS=-30V					-100	nA
	VDSS	Drain-to-Source Voltage		650	V
ON Characteristics	Drain-to-Source On-Resistance	VGS=10V,ID=2A				1.95
	Gate Threshold Voltage	VDS=VGS,ID=250A			2.0	3.0	4.0	V
	RDS(ON)typ					2
Dynamic Characteristics	Forward Transconductance	VDS=15V,ID=2A				3.5	S
	Input Capacitance	VGS=0V,VDS=25V f=1.0MHz				610	pF
	Output Capacitance					53		pF
	Reverse Transfer Capacitance					3.5		pF
Resistive Switching Characteristics	Turn-on Delay Time	ID=4A,VDD=325V RG=10				15	ns
	Rise Time					30		ns
	Turn-Off Delay Time					50		ns
	Fall Time					40		ns
	Total Gate Charge	ID=4A,VDD=325V VGS=10V				10		nC
Source-Drain Diode Characteristics	Continuous Source Current (Body Diode)					4	A
	Diode Forward Voltage	IS=4.0A,VGS=0V					1.5	V
	Reverse Recovery Time	IS=4.0A,Tj=25C dIF/dt=100A/us, VGS=0V				256		ns
Thermal Characteristics	Junction-to-Case					1.67	/W
Thermal Characteristics	Junction-to-Ambient					100	/W
Absolute Ratings	Continuous Drain Current	TC = 25C	4	A
	Continuous Drain Current	TC = 100 C	2.5	A
	Pulsed Drain Current		16	A
Gate-to-Source Voltage		30	V
Single Pulse Avalanche Energy		200	mJ
Peak Diode Recovery dv/dt		5.0	V/ns
Power Dissipation	TC=25	75	W
Derating Factor above 25C		0.6	W/
Operating Junction and Storage Temperature Range		55 to 150				150
Maximum Temperature for Soldering		300