Power application NPN transistor UTC MMBT5551G B AE3 R featuring high current gain and voltage rating

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Product Description

Product Overview

The UTC MMBT5551 is a high voltage, fast-switching NPN silicon transistor designed for power applications. It offers high breakdown voltage, high current gain, and high switching speed, making it suitable for various switching applications.

Product Attributes

Brand: UNISONIC TECHNOLOGIES CO., LTD
Material: Silicon
Type: NPN Transistor

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
Collector-Base Voltage	VCBO	180	V	IC=100μA, IE=0
Collector-Emitter Voltage	VCEO	160	V	IC=1mA, IB=0
Emitter-Base Voltage	VEBO	6	V	IE=10μA, IC=0
DC Collector Current	IC	600	mA
Power Dissipation	PD	350	mW
Junction Temperature	TJ	+150	°C
Storage Temperature	TSTG	-40 ~ +150	°C
Junction to Ambient Thermal Resistance	ΘJA	357	°C/W
Junction to Case Thermal Resistance	ΘJC	104	°C/W
Collector Cut-off Current	ICBO	50	nA	VCB=120V, IE=0
Emitter Cut-off Current	IEBO	50	nA	VBE=4V, IC =0
DC Current Gain	hFE	80-170 (Rank A), 150-240 (Rank B), 200-400 (Rank C)		VCE=5V, IC =1mA (Rank A), VCE=5V, IC =10mA (Rank B, C)
Collector-Emitter Saturation Voltage	VCE(SAT)	0.15 (typ), 0.2 (typ)	V	IC=10mA, IB=1mA; IC=50mA, IB=5mA
Base-Emitter Saturation Voltage	VBE(SAT)	1	V	IC=10mA, IB=1mA; IC=50mA, IB=5mA
Current Gain Bandwidth Product	fT	100-300	MHz	VCE=10V, IC =10mA, f=100MHz
Output Capacitance	Cob	6.0	pF	VCB=10V, IE=0, f=1MHz
Noise Figure	NF	8 (max)	dB	IC=0.25mA, VCE=5V RS=1kΩ, f=10Hz ~ 15.7kHz