Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching
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Product Description
Product Overview
The UTC 2N6718 is a general-purpose NPN silicon transistor designed for medium power amplifier and switching applications, offering high power (850mW) and high current (1A) capabilities.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Product Code: 2N6718
- Type: NPN General Planar Transistor
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | SOT-89 | TO-126C | TO-92 | Unit | Notes |
| Collector-Base Voltage | VCBO | 100 | V | |||
| Collector-Emitter Voltage | VCEO | 100 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current (Continue) | IC | 1 | A | |||
| Collector Current (Pulse) | IC | 2 | A | |||
| Total Power Dissipation | PD | 1 | 1.6 | 850 | mW | Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction Temperature | TJ | +150 | C | |||
| Operating Temperature | TOPR | -40 ~ +125 | C | |||
| Storage Temperature | TSTG | -55 ~ +150 | C | |||
| Junction to Ambient Thermal Resistance | JA | 125 | 78 | 147 | C/W | |
| Junction to Case Thermal Resistance | JC | 70 | 6.25 | 80 | C/W | |
| Collector-Base Breakdown Voltage | BVCBO | 100 | V | IC=100uA | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | V | IC=1mA | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE=10A | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 350 | mV | IC=350mA, IB=35mA | ||
| Collector Cut-Off Current | ICBO | 100 | nA | VCB=80V | ||
| DC Current Gain | hFE1 | 80 | VCE=1V, IC=50mA | |||
| DC Current Gain | hFE2 | 50~300 | VCE=1V, IC=250mA | |||
| DC Current Gain | hFE3 | 20 | VCE=1V, IC=500mA | |||
| Current Gain - Bandwidth Product | fT | 50 | MHz | VCE=10V, IC=50mA, f=100MHz | ||
| Output Capacitance | Cob | 20 | pF | VCB=10V, IE=0, f=1MHz | ||
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