Power MOSFET N channel Multi EPI Super Junction 650V 25A XCH GSA25N65EF designed for energy management
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Product Description
Product Overview
The GSW/GSA25N65EF is a 650V, 25A N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. It features advanced technology for improved characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This series is designed for applications requiring high voltage and efficient power handling.
Product Attributes
- Brand: XCH Semiconductor
- Series: Multi-EPI Super-Junction
Technical Specifications
| Model | PKG | VDSS (V) | ID (A) | IDM (A) | VGSS (V) | EAS (mJ) | IAR (A) | EAR (mJ) | dv/dt (V/ns) | PD (W) | TJ, TSTG (C) | RJC (C/W) | RJA (C/W) | BVDSS (V) | IDSS (A) | IGSS (nA) | VGS(th) (V) | RDS(on) () | gFS (S) | Ciss (pF) | Coss (pF) | Crss (pF) | td(on) (ns) | tr (ns) | td(off) (ns) | tf (ns) | Qg (nC) | Qgs (nC) | Qgd (nC) | IS (A) | ISM (A) | VSD (V) | trr (ns) | Qrr (C) |
| GSW25N65EF | TO-247 | 650 | 25* (TC=25) 15* (TC=100) | 53 | 30 | 500 | 4 | 1.2 | 15 | 210 | -55 to +150 | 0.58 | 62 | 650 (TJ=25) 700 (TJ=150) | 1 (TJ=150) | 100 (Fwd) -100 (Rev) | 2-4 | 0.14 (@VGS=10V, ID=12A) | 16 | 1650 | 90 | 9 | 28 | 19 | 140 | 12 | 110-140 | 9 | 15 | 25 | 75 | 0.9-1.5 | 190 | 6 |
| GSA25N65EF | TO-220F | 650 | 25* (TC=25) 15* (TC=100) | 53 | 30 | 500 | 4 | 1.2 | 15 | 35 | -55 to +150 | 3.7 | 62 | 650 (TJ=25) 700 (TJ=150) | 1 (TJ=150) | 100 (Fwd) -100 (Rev) | 2-4 | 0.14 (@VGS=10V, ID=12A) | 16 | 1650 | 90 | 9 | 28 | 19 | 140 | 12 | 110-140 | 9 | 15 | 25 | 75 | 0.9-1.5 | 190 | 6 |
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