Silicon Carbide Schottky Diode Wolfspeed C6D20065A 650V 20A for Power Electronics Applications
Product Overview
The Wolfspeed C6D20065A is a 650V, 20A Silicon Carbide (SiC) Schottky Barrier diode designed to enhance power electronics systems with higher efficiency, increased switching frequencies, and improved power densities compared to traditional silicon-based solutions. Its SiC technology offers a low forward voltage drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. These diodes can be easily paralleled without concern for thermal runaway, leading to reduced cooling requirements and lower overall system costs. It is suitable for applications such as industrial switched-mode power supplies, uninterruptible and auxiliary power supplies, boost stages for PFC and DC-DC converters, and solar inverters.
Product Attributes
- Brand: Wolfspeed
- Material: Silicon Carbide (SiC)
- Registered Trademarks: Wolfspeed, Wolfstreak logo
- Trademark: Wolfspeed logo
- RoHS Compliance: Compliant with EU Directive 2011/65/EC (RoHS2)
- REACh Compliance: SVHC information available upon request.
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Conditions | Notes |
|---|---|---|---|---|---|
| General | |||||
| Package Type | TO-220-2 | ||||
| Marking | C6D20065A | ||||
| Revision | 1 | April 2023 | |||
| Maximum Ratings | |||||
| Repetitive Peak Reverse Voltage | VRRM | 650 | V | (TC = 25C Unless Otherwise Specified) | DC Blocking Voltage |
| Continuous Forward Current | IF | 66 | A | TJ = 25 C | Fig. 3 |
| 33 | A | TJ = 125 C | |||
| 21 | A | TJ = 150 C | |||
| Repetitive Peak Forward Surge Current | IFRM | 75 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | |
| 42 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Forward Surge Current | IFSM | 125 | A | TC = 25 C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| 99 | A | TC = 110 C, tp = 10 ms, Half Sine Wave | |||
| Non-Repetitive Peak Forward Surge Current | IF,Max | 1475 | A | TC = 25 C, tp = 10 s, Pulse | |
| 1225 | A | TC = 110C, tp = 10 s, Pulse | |||
| Power Dissipation | Ptot | 166 | W | TJ = 25 C | Fig. 4 |
| 51 | W | TJ = 110 C | |||
| i2t Value | i2t | 83 | As | TC = 25 C, tp = 10 ms | |
| 51 | As | TC = 110C, tp = 10 ms | |||
| Electrical Characteristics | |||||
| Forward Voltage | VF | 1.27 | V | IF = 20 A, Tj = 25 C | Fig. 1 (Typ.) |
| 1.50 | V | IF = 20 A, Tj = 25 C | Fig. 1 (Max.) | ||
| 1.37 | V | IF = 20 A, Tj = 175 C | Fig. 1 (Typ.) | ||
| 1.60 | V | IF = 20 A, Tj = 175 C | Fig. 1 (Max.) | ||
| Reverse Current | IR | 5 | A | VR = 650 V, Tj = 25 C | Fig. 2 (Typ.) |
| 30 | A | VR = 650 V, Tj = 25 C | Fig. 2 (Max.) | ||
| 40 | A | VR = 650 V, Tj = 175 C | Fig. 2 (Typ.) | ||
| 300 | A | VR = 650 V, Tj = 175 C | Fig. 2 (Max.) | ||
| Total Capacitive Charge | QC | 62 | nC | VR = 400 V, Tj = 25 C | Fig. 5 |
| Total Capacitance | C | 1153 | pF | VR = 0 V, Tj = 25 C, f = 1 MHz | Fig. 6 (Typ.) |
| 120 | pF | VR = 200 V, Tj = 25 C, f = 1 MHz | Fig. 6 (Typ.) | ||
| 96 | pF | VR = 400 V, Tj = 25 C, f = 1 MHz | Fig. 6 (Typ.) | ||
| Capacitance Stored Energy | EC | 9.5 | J | VR = 400 V | Fig. 7 |
| Thermal & Mechanical Characteristics | |||||
| Thermal Resistance, Junction to Case (Typical) | R, JC (TYP) | 0.67 | C / W | ||
| Thermal Resistance, Junction to Case (Maximum) | R, JC (MAX) | 0.86 | C / W | ||
| Junction Temperature | Tj | -55 to +175 | C | ||
| Case & Storage Temperature | Tc | -55 to +175 | C | ||
| Mounting Torque | 1 | Nm | M3 Screw | ||
| 8.8 | lbf-in | 6-32 Screw | |||
| Electrostatic Discharge (ESD) Classifications | |||||
| Human Body Model | HBM | Class 3B ( 8000 V) | |||
| Charge Device Model | CDM | Class C3 ( 1000 V) | |||
| Package Dimensions & Pin-Out | |||||
| Pin 1 | CATHODE | ||||
| Pin 2 | ANODE | ||||
| Pin 3 | CATHODE | ||||
| Product Ordering Information | |||||
| Order Number | C6D20065A | Tube Packing | |||
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