Hefei Purple Horn E-Commerce Co., Ltd.
                                                                                                           
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Power MOSFET N Channel Device XCH XCH2302 Featuring Low RDS On and 5V Logic Level Control for Switches

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

N Channel Advanced Power MOSFET offering low RDS(on) at VGS=5V and 5V logic level control in a SOT23 package. This Pb-free, RoHS compliant device is optimized for power management applications in portable products, including DC fans, chargers, fast switches, H-bridges, inverters, and car chargers.

Product Attributes

  • Certifications: Pb-Free, RoHS Compliant
  • Package: SOT23
  • Marking: A2SHB
  • Packing: 3000PCS/Reel

Technical Specifications

SymbolParameterConditionMinTypMaxUnit
Absolute Maximum Ratings
VGSGate-Source Voltage12V
V(BR)DSSDrain-Source Breakdown Voltage20V
TJMaximum Junction Temperature150C
TSTGStorage Temperature Range-50150C
IDMPulse Drain CurrentTested TA=25C12A
IDContinuous Drain Current(VGS=-10V) TA=25C2.8A
IDContinuous Drain Current(VGS=-10V) TA=70C2.5A
PDMaximum Power DissipationTA=25C1W
PDMaximum Power DissipationTA=70C0.8W
RJAThermal Resistance Junction-AmbientMounted on Large Heat Sink125C/W
Electrical Characteristics
V(BR)DSSDrain-Source Breakdown VoltageVGS=0V ID=250A20----V
IDSSZero Gate Voltage Drain Current(TA=25) VDS=20V, VGS=0V----1A
IDSSZero Gate Voltage Drain Current(TA=125) VDS=16V, VGS=0V----100nA
IGSSGate-Body Leakage CurrentVGS=10V, VDS=0V----100nA
VGS(TH)Gate Threshold VoltageVDS=VGS, ID=250A0.40.60.9V
RDS(ON)Drain-Source On-State ResistanceVGS=4.5V, ID=3A--4260m
RDS(ON)Drain-Source On-State ResistanceVGS=3.3V, ID=2A--m
Dynamic Electrical Characteristics
CissInput CapacitanceVDS=10V, VGS=0V, f=1MHz--160--pF
CossOutput Capacitance--30--pF
CrssReverse Transfer Capacitance--25--pF
QgTotal Gate ChargeVDS=10V ID=3A, VGS=5V--4.0--nC
QgsGate Source Charge--0.4--nC
Qg dGate Drain Charge--1.2--nC
Switching Characteristics
td(on)Turn on Delay TimeVDD=10V, ID=2A, RG=3.3, VGS=4.5V--8--ns
trTurn on Rise Time--30--ns
td(off)Turn Off Delay Time-19----ns
tfTurn Off Fall Time--28--ns
Source Drain Diode Characteristics
ISDSource drain current(Body Diode)TA=25----2.6A
VSDForward on voltageTj=25, ISD=2A, VGS=0V--0.871.2V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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