NPN epitaxial silicon transistor UTC 2SD1616AG-G-T92-K for audio frequency power amplification and switching
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Product Description
Product Overview
The UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A is an NPN epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Material: Silicon
- Type: NPN Epitaxial Silicon Transistor
Technical Specifications
| Parameter | Symbol | 2SD1616 | 2SD1616A | Unit | Test Conditions | Min | Typ | Max | |
| Collector to Base Voltage | VCBO | 60 | 120 | V | |||||
| Collector to Emitter Voltage | VCEO | 50 | 60 | V | |||||
| Emitter to Base Voltage | VEBO | 6 | V | ||||||
| Collector Current | IC | 1 | A | ||||||
| Pulse Collector Current | ICM | 2 | A | Pulse width≤10ms, Duty cycle<50% | |||||
| Total Power Dissipation | PC | 750 | mW | TA=25°C | |||||
| Junction Temperature | TJ | +150 | °C | ||||||
| Storage Temperature | TSTG | -55 ~ +150 | °C | ||||||
| Collector-Emitter Saturation Voltage | VCE (SAT) | V | IC=1A, IB=50mA | 0.15 | 0.3 | ||||
| Base-Emitter Saturation Voltage | VBE (SAT) | V | IC=1A, IB=50mA | 0.9 | 1.2 | ||||
| Base Emitter On Voltage | VBE (ON) | mV | VCE =2V, IC =50mA | 600 | 640 | 700 | |||
| Collector Cut-Off Current | ICBO | nA | VCB=60V | 100 | |||||
| Emitter Cut-Off Current | IEBO | nA | VEB= 6V | 100 | |||||
| DC Current Gain | hFE1 | 135 ~ 600 | VCE =2V, IC =100mA | 135 | 600 | ||||
| DC Current Gain | hFE2 | VCE =2V, IC=1A | 81 | ||||||
| Transition Frequency | fT | MHz | VCE =2V, IC =100mA | 100 | 160 | ||||
| Output Capacitance | Cob | pF | VCB =10V, f =1MHz | 19 | |||||
| Turn On Time | tON | μs | VCE =10V, IC =100mA | 0.07 | |||||
| Storage Time | tSTG | μs | IB1 = -IB2 =10mA | 0.95 | |||||
| Fall Time | tF | μs | VBE(OFF) = -2 ~ -3V | 0.07 | |||||
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