Half Bridge Module with Aluminum Nitride Insulator Wolfspeed CAS530M12BM3 Silicon Carbide Technology
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Product Description
Wolfspeed CAS530M12BM3 Silicon Carbide Half-Bridge Module
Product Overview
The Wolfspeed CAS530M12BM3 is a 1200 V, 530 A Silicon Carbide (SiC) Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from its diodes and zero turn-off tail current from its MOSFETs, enabling normally-off, fail-safe device operation. The module utilizes a copper baseplate and aluminum nitride insulator for efficient thermal management. Its industry-standard 62 mm footprint allows for system retrofitting and increased system efficiency due to the inherent low switching and conduction losses of SiC technology. Key applications include induction heating, motor drives, renewables, railway auxiliary and traction systems, EV fast charging, and UPS and SMPS.
Product Attributes
- Brand: Wolfspeed
- Technology: Silicon Carbide (SiC)
- Device Type: Half-Bridge Module
- Footprint: Industry Standard 62 mm
- Baseplate Material: Copper
- Insulator Material: Aluminum Nitride
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions | Note |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 1200 | V | ||||
| Drain-Source DC Current | ID | 486 | A | VGS = 15 V, TC = 90 C, TVJ 175 C | 2, 3 | ||
| DC Source-Drain Current (Schottky Diode) | ISD(SD) | 632 | A | VGS = -4 V, TC = 25 C, TVJ 175 C | |||
| Pulsed Drain-Source Current | IDM | 1060 | A | VGS = 15 V, TC = 25 C, tPmax limited by TVJmax | |||
| Power Dissipation | PD | 2000 | W | TC = 25 C, TVJ 175 C | 4 | ||
| Virtual Junction Temperature (Operation) | TVJ(op) | -40 | 150 | C | Operation | ||
| Virtual Junction Temperature (Intermittent) | TVJ | 175 | C | Intermittent with Reduced Life | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 127 mA | |
| Zero Gate Voltage Drain Current | IDSS | 12.8 | 1692 | A | VGS = 0 V, VDS = 1200 V | ||
| Gate-Source Leakage Current | IGSS | 60 | 600 | nA | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance | RDS(on) | 2.7 | 3.5 | m | VGS = 15 V, ID = 530 A | Fig. 2, 3 | |
| Transconductance | gfs | 449 | S | VDS = 20 V, ID = 530 A | Fig. 4 | ||
| Turn-On Switching Energy | EON | 6.6 | mJ | TVJ = 25 C, VDD = 600 V, ID = 530 A, VGS = -4 V/15 V, RG(OFF) = 0.5 , RG(ON) = 0.5 , L = 13.6 H | Fig. 11, 13 | ||
| Turn-Off Switching Energy | EOFF | 8.9 | mJ | TVJ = 25 C, VDD = 600 V, ID = 530 A, VGS = -4 V/15 V, RG(OFF) = 0.5 , RG(ON) = 0.5 , L = 13.6 H | Fig. 11, 13 | ||
| Input Capacitance | Ciss | 38.9 | nF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Output Capacitance | Coss | 2.6 | nF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Reverse Transfer Capacitance | Crss | 48.5 | pF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Diode Forward Voltage | VF | 2.0 | V | VGS = -4 V, IF = 530 A, TVJ = 25 C | Fig. 7 | ||
| Reverse Recovery Time | tRR | 25.5 | ns | VGS = -4 V, ISD = 530 A, VR = 800 V, di/dt = 18.0 A/ns, TVJ = 150 C | Fig. 32 | ||
| Reverse Recovery Charge | QRR | 4.8 | C | VGS = -4 V, ISD = 530 A, VR = 800 V, di/dt = 18.0 A/ns, TVJ = 150 C | Fig. 32 | ||
| Reverse Recovery Energy | ERR | 1.9 | mJ | VDS = 600 V, ID = 530 A, VGS = -4 V/15 V, RG(ext) = 0.5 , L = 13.6 H, TVJ = 25 C | Note 5, Fig. 14 | ||
| Diode Thermal Resistance, JCT. to Case | Rth JC | 0.078 | C/W | Fig. 18 | |||
| MOSFET Thermal Resistance, Junction to Case | Rth JC | 0.075 | C/W | Fig. 17 | |||
| Package Resistance, M1 (High-Side) | R3-1 | 0.90 | m | TC = 25 C, ISD = 530 A | Note 6 | ||
| Package Resistance, M2 (Low-Side) | R1-2 | 0.97 | m | TC = 25 C, ISD = 530 A | Note 6 | ||
| Stray Inductance | LStray | 11.1 | nH | Between DC- and DC+, f = 10 MHz | |||
| Case Temperature | TC | -40 | 125 | C | |||
| Mounting Torque | MS | 4 | 5 | 5.5 | N-m | Baseplate, M6-1.0 Bolts | |
| Case Isolation Voltage | Visol | 5 | kV AC, 50 Hz, 1 minute | ||||
| Clearance Distance (Terminal to Terminal) | 9 | mm | |||||
| Clearance Distance (Terminal to Baseplate) | 30 | mm | |||||
| Creepage Distance (Terminal to Terminal) | 30 | mm | |||||
| Creepage Distance (Terminal to Baseplate) | 40 | mm | |||||
| Weight | W | 300 | g |
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