High Reliability MOSFET XDS TX40N06B 60 Volt TrenchFET Device for Server Power and ORing Applications
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Product Description
Product Overview
The TX40N06B is a 1-Channel 60-V (D-S) MOSFET featuring TrenchFET Power MOSFET technology. It is 100% Rg and UIS tested and compliant with RoHS Directive 2011/65/EU. This MOSFET is designed for applications such as OR-ing, server power supplies, and DC/DC converters.
Product Attributes
- Brand: XDSemi (implied by www.xdssemi.com)
- Technology: TrenchFET Power MOSFET
- Certifications: Compliant to RoHS Directive 2011/65/EU
- Testing: 100 % Rg and UIS Tested
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 60 | V | ||
| VDS Temperature Coefficient | VDS/TJ | ID = 250 A | 35 | mV/C | ||
| VGS(th) Temperature Coefficient | VGS(th)/TJ | -7.5 | ||||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.5 | 2.0 | V | |
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30 V, VGS = 0 V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30 V, VGS = 0 V, TJ = 55 C | 10 | A | ||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 90 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 38.8 A | 0.025 | |||
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5 V, ID = 37 A | 0.030 | |||
| Forward Transconductance | gfs | VDS = 15 V, ID = 38.8 A | 160 | S | ||
| Input Capacitance | Ciss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 6201 | pF | ||
| Output Capacitance | Coss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 1725 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15 V, VGS = 0 V, f = 1 MHz | 970 | pF | ||
| Total Gate Charge | Qg | VDS = 15 V, VGS = 10 V, ID = 38.8 A | 171 | 257 | nC | |
| Total Gate Charge | Qg | VDS = 15 V, VGS = 4.5 V, ID = 28.8 A | 81.5 | 123 | nC | |
| Gate-Source Charge | Qgs | 34 | nC | |||
| Gate-Drain Charge | Qg | 29 | nC | |||
| Gate Resistance | Rg | f = 1 MHz | 1.4 | 2.1 | ||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 0.625 , ID = 24 A, VGEN = 10 V, Rg = 1 | 18 | 27 | ns | |
| Rise Time | tr | VDD = 15 V, RL = 0.625 , ID = 24 A, VGEN = 10 V, Rg = 1 | 11 | 17 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 15 V, RL = 0.625 , ID = 24 A, VGEN = 10 V, Rg = 1 | 70 | 105 | ns | |
| Fall Time | tf | VDD = 15 V, RL = 0.625 , ID = 24 A, VGEN = 10 V, Rg = 1 | 10 | 15 | ns | |
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 0.67 , ID = 22.5 A, VGEN = 4.5 V, Rg = 1 | 55 | 83 | ns | |
| Rise Time | tr | VDD = 15 V, RL = 0.67 , ID = 22.5 A, VGEN = 4.5 V, Rg = 1 | 180 | 270 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 15 V, RL = 0.67 , ID = 22.5 A, VGEN = 4.5 V, Rg = 1 | 55 | 83 | ns | |
| Fall Time | tf | VDD = 15 V, RL = 0.67 , ID = 22.5 A, VGEN = 4.5 V, Rg = 1 | 12 | 18 | ns | |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | 120 | A | ||
| Pulse Diode Forward Current | ISM | 120 | A | |||
| Body Diode Voltage | VSD | IS = 22 A | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 20 A, di/dt = 100 A/s, TJ = 25 C | 52 | 78 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = 20 A, di/dt = 100 A/s, TJ = 25 C | 70.2 | 105 | nC | |
| Reverse Recovery Fall Time | ta | IF = 20 A, di/dt = 100 A/s, TJ = 25 C | 27 | ns | ||
| Reverse Recovery Rise Time | tb | IF = 20 A, di/dt = 100 A/s, TJ = 25 C | 25 | ns |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina