High Current Silicon Carbide Half Bridge Module Wolfspeed CAS350M12BM3 350 Amp 62 Millimeter Package
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Delivery Time:
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Product Description
Product Overview
The CAS350M12BM3 is a 1200 V, 350 A Silicon Carbide (SiC) half-bridge module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from MOSFETs, offering normally-off, fail-safe device operation. The module utilizes a copper baseplate and aluminum nitride insulator for efficient thermal management. Its industry-standard 62mm footprint facilitates system retrofitting and enables increased system efficiency. Key applications include induction heating, motor drives, renewables, railway auxiliary & traction, EV fast charging, and UPS and SMPS.
Product Attributes
- Brand: Wolfspeed
- Technology: Silicon Carbide (SiC)
- Package Footprint: 62mm
- Operation: Normally-off, Fail-safe
- Baseplate Material: Copper
- Insulator Material: Aluminum Nitride
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Note |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 1200 | V | ||||
| Drain Current | IDS | 350 | A | VGS = 15 V, TC = 90 C, TVJ 175 C | |||
| Gate-Source Voltage, Maximum Value | VGS max | -8 | +19 | V | Transient, <100 ns | Fig. 33 | |
| Gate-Source Voltage, Recommended | VGS op | -4 | +15 | V | |||
| Continuous Drain Current | ID | 417 | A | VGS = 15 V, TC = 25 C, TVJ 175 C | Fig. 21 | ||
| DC Source-Drain Current (Diode) | ISD | 440 | A | VGS = - 4 V, TC = 25 C, TVJ 175 C | |||
| Pulsed Drain Current | ID (pulsed) | 700 | A | VGS = 15 V, TC = 25 C | tPmax limited by TVJmax | ||
| Virtual Junction Temperature | TVJ op | -40 | 150 | C | Operation | 175 Intermittent with Reduced Life | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, TVJ = -40 C | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 85 mA | 2.0 VDS = VGS, ID = 85 mA, TVJ = 175 C |
| Zero Gate Voltage Drain Current | IDSS | 8.2 | 1128 | A | VGS = 0 V, VDS = 1200 V | ||
| Gate-Source Leakage Current | IGSS | 40 | 400 | nA | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance | RDS(on) | 4.0 | 5.2 | m | VGS = 15 V, ID = 350 A | Fig. 2, Fig. 3 | |
| 6.5 | m | VGS = 15 V, ID = 350 A, TVJ = 150 C | |||||
| Transconductance | gfs | 306 | S | VDS = 20 V, ID = 350 A | Fig. 4 | ||
| 292 | S | VDS = 20 V, ID = 350 A, TVJ = 150 C | |||||
| Turn-On Switching Energy | EOn | 5.0 | mJ | VDD = 600 V, ID = 350 A, VGS = -4 V/15 V, RG(OFF) = 0.5 , RG(ON) = 0.5 , L = 25 H | TVJ = 25 C, Fig. 11, Fig. 13 | ||
| 4.5 | mJ | TVJ = 125 C | |||||
| 4.4 | mJ | TVJ = 150 C | |||||
| Turn-Off Switching Energy | EOff | 4.8 | mJ | TVJ = 25 C | Fig. 11, Fig. 13 | ||
| 4.8 | mJ | TVJ = 125 C | |||||
| 4.9 | mJ | TVJ = 150 C | |||||
| Internal Gate Resistance | RG(int) | 2.53 | f = 100 kHz, VAC = 25 mV | ||||
| Input Capacitance | Ciss | 25.7 | nF | VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz | Fig. 9 | ||
| Output Capacitance | Coss | 1.8 | nF | ||||
| Reverse Transfer Capacitance | Crss | 44.5 | pF | ||||
| Gate to Source Charge | QGS | 268 | nC | VDS = 800 V, VGS = -4 V/15 V, ID = 350 A, Per IEC60747-8-4 pg 21 | |||
| Gate to Drain Charge | QGD | 244 | nC | ||||
| Total Gate Charge | QG | 844 | nC | ||||
| FET Thermal Resistance, Junction to Case | Rth JC | 0.116 | C/W | Fig. 17 | |||
| Diode Forward Voltage | VF | 2.0 | V | VGS = -4 V, IF = 350 A, TVJ = 25 C | Fig. 7 | ||
| 2.5 | V | VGS = -4 V, IF = 350 A, TVJ = 150 C | |||||
| Reverse Recovery Time | trr | 24.5 | ns | VGS = -4 V, ISD = 350 A, VR = 800 V di/dt = 13.0 A/ns, TVJ = 150 C | Fig. 32 | ||
| Reverse Recovery Charge | Qrr | 5.0 | C | ||||
| Peak Reverse Recovery Current | Irrm | 341 | A | ||||
| Reverse Recovery Energy | Err | 1.7 | mJ | VDS = 600 V, ID = 350 A, VGS = -4 V/15 V, RG(ext) = 0.5 , L = 25 H | TVJ = 25 C, Fig. 14 | ||
| 2.0 | mJ | TVJ = 125 C | Note: 1 | ||||
| 2.0 | mJ | TVJ = 150 C | |||||
| Diode Thermal Resistance, JCT. to Case | Rth JC | 0.112 | C/W | Fig. 18 | |||
| Package Resistance, M1 (High-Side) | R3-1 | 1.31 | m | TC = 25 C, ISD = 350 A, Note 2 | |||
| 1.84 | m | TC = 125 C, ISD = 350 A, Note 2 | |||||
| Package Resistance, M2 (Low-Side) | R1-2 | 1.26 | m | TC = 25 C, ISD = 350 A, Note 2 | |||
| 1.77 | m | TC = 125 C, ISD = 350 A, Note 2 | |||||
| Stray Inductance | LStray | 11.1 | nH | Between DC- and DC+, f = 10 MHz | |||
| Case Temperature | TC | -40 | 125 | C | |||
| Mounting Torque | MS | 4 | 5 | 5.5 | N-m | Baseplate, M6-1.0 bolts | 4 5 5.5 Power Terminals, M6-1.0 bolts |
| Weight | W | 300 | g | ||||
| Case Isolation Voltage | Visol | 5 | kV AC, 50 Hz, 1 minute | ||||
| Clearance Distance | 9 | mm | Terminal to Terminal | 30 Terminal to Baseplate | |||
| Creepage Distance | 30 | mm | Terminal to Terminal | 40 Terminal to Baseplate |
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