100 Volt N Channel MOSFET VBsemi Elec FDS3672 NL VB designed for switching and low switching losses
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Product Description
Product Overview
The FDS3672-NL-VB is an N-Channel 100 V (D-S) MOSFET designed for primary side switching applications. It features extremely low Qgd for reduced switching losses, and is 100% Rg and Avalanche tested. This RoHS compliant device is halogen-free, making it suitable for various electronic designs requiring high efficiency and reliability.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free According to IEC 61249-2-21 Definition, Compliant to RoHS Directive 2002/95/EC
- Material: N-Channel MOSFET
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions | |
| Drain-Source Voltage | VDS | 100 | V | ||
| Gate-Source Voltage | VGS | ± 20 | V | ||
| Continuous Drain Current (TC = 25 °C) | ID | 9 | A | TC = 25 °C | |
| Continuous Drain Current (TC = 70 °C) | ID | 6 | A | TC = 70 °C | |
| Continuous Drain Current (TA = 25 °C) | ID | 7 | A | TA = 25 °C | |
| Continuous Drain Current (TA = 70 °C) | ID | 3.8 | A | TA = 70 °C | |
| Pulsed Drain Current | IDM | 40 | A | ||
| Continuous Source-Drain Diode Current | IS | 7 | A | TC = 25 °C | |
| Single Pulse Avalanche Current (L = 0.1 mH) | IAS | 30 | A | ||
| Single Pulse Avalanche Energy | EAS | 112 | mJ | ||
| Maximum Power Dissipation (TC = 25 °C) | PD | 14 | W | TC = 25 °C | |
| Maximum Power Dissipation (TC = 70 °C) | PD | 5 | W | TC = 70 °C | |
| Maximum Power Dissipation (TA = 25 °C) | PD | 2 | W | TA = 25 °C | |
| Maximum Power Dissipation (TA = 70 °C) | PD | 1.2 | W | TA = 70 °C | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to 150 | °C | ||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | |
| VDS Temperature Coefficient | ΔVDS /ΔTj | 172 | mV/°C | ID = 250 µA | |
| VGS(th) Temperature Coefficient | ΔVGS(th) /ΔTj | - 10 | mV/°C | VDS = VGS , ID = 250 µA | |
| Gate-Source Threshold Voltage | VGS(th) | 1.0 | 3.0 | V | VDS = VGS , ID = 250 µA |
| Gate-Source Leakage | IGSS | ± 100 | nA | VDS = 0 V, VGS = ± 20 V | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | |
| Zero Gate Voltage Drain Current (TJ = 55 °C) | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | |
| On-State Drain Current | ID(on) | 30 | A | VDS ≥ 10 V, VGS = 10 V | |
| Drain-Source On-State Resistance | RDS(on) | 2 | 3 | mΩ | VGS = 10 V, ID = 5 A |
| Drain-Source On-State Resistance | RDS(on) | 33 | mΩ | VGS = 4.5 V, ID = 5 A | |
| Forward Transconductance | gfs | 20 | S | VDS = 15 V, ID = 5 A | |
| Input Capacitance | Ciss | 1900 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | |
| Output Capacitance | Coss | 150 | pF | VDS = 75 V, VGS = 10 V, ID = 5 A | |
| Reverse Transfer Capacitance | Crss | 50 | pF | VDS = 75 V, VGS = 10 V, ID = 5 A | |
| Total Gate Charge | Qg | 28.5 | 43 | nC | VDS = 75 V, VGS = 10 V, ID = 5 A |
| Gate-Source Charge | Qgs | 8 | nC | VDS = 75 V, VGS = 8 V, ID = 5 A | |
| Gate-Drain Charge | Qgd | 6.5 | nC | VDS = 75 V, VGS = 8 V, ID = 5 A | |
| Gate Resistance | Rg | 0.8 | 1.3 | Ω | f = 1 MHz |
| Turn-on Delay Time | td(on) | 14 | 21 | ns | VDD = 50 V, RL = 10 Ω, ID ≈ 5 A, VGEN = 10 V, Rg = 1 Ω |
| Rise Time | tr | 12 | 18 | ns | VDD = 50 V, RL = 10 Ω, ID ≈ 5 A, VGEN = 10 V, Rg = 1 Ω |
| Turn-Off Delay Time | td(off) | 22 | 33 | ns | VDD = 50 V, RL = 10 Ω, ID ≈ 5 A, VGEN = 10 V, Rg = 1 Ω |
| Fall Time | tf | 6 | 10 | ns | VDD = 50 V, RL = 10 Ω, ID ≈ 5 A, VGEN = 10 V, Rg = 1 Ω |
| Turn-On Delay Time | td(on) | 16 | 24 | ns | VDD = 50 V, RL = 10 Ω, ID ≈ 5 A, VGEN = 8 V, Rg = 1 Ω |
| Rise Time | tr | 12 | 18 | ns | VDD = 50 V, RL = 10 Ω, ID ≈ 5 A, VGEN = 8 V, Rg = 1 Ω |
| Turn-Off Delay Time | td(off) | 20 | 30 | ns | VDD = 50 V, RL = 10 Ω, ID ≈ 5 A, VGEN = 8 V, Rg = 1 Ω |
| Fall Time | tf | 7 | 12 | ns | VDD = 50 V, RL = 10 Ω, ID ≈ 5 A, VGEN = 8 V, Rg = 1 Ω |
| Continuous Source-Drain Diode Current | IS | 7.7 | A | TC = 25 °C | |
| Pulse Diode Forward Current | ISM | 50 | A | ||
| Body Diode Voltage | VSD | 0.77 | 1.2 | V | IS = 2.6 A |
| Body Diode Reverse Recovery Time | trr | 63 | 95 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C |
| Body Diode Reverse Recovery Charge | Qrr | 110 | 165 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C |
| Reverse Recovery Fall Time | ta | 49 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | |
| Reverse Recovery Rise Time | tb | 14 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | |
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | 33 | 40 | °C/W | t ≤ 10 s |
| Maximum Junction-to-Foot (Drain) Thermal Resistance | RthJF | 17 | 21 | °C/W | Steady State |
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