N Channel MOSFET 650V WPMtek WTM40N65ATL with Enhanced Switching and Low Resistance Characteristics
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Product Description
WTM40N65AF/AMP/ATL 650V N-Channel Multi-EPI Super-Junction MOSFET
This Power MOSFET is produced using WPMteks advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies.
Product Attributes
- Brand: WPMtek
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous (TC = 25) | 40 | A | |||
| ID | Drain Current - Continuous (TC = 100) | 23 | A | |||
| IDM | Drain Current - Pulsed (Note 1) | 110 | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note 2) | 636 | mJ | |||
| IAR | Avalanche Current (Note 1) | 5.4 | A | |||
| EAR | Repetitive Avalanche Energy (Note 1) | 2.6 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 50 | V/ns | |||
| dv/dt | MOSFET dv/dt | 100 | ||||
| PD | Power Dissipation (TC = 25) TO-247 | 306 | W | |||
| PD | Power Dissipation (TC = 25) TO-220F | 42 | W | |||
| PD | Power Dissipation (TC = 25) TOLL-8L | 257 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | 3.6 | 0.48 | /W | ||
| RJS | Thermal Resistance, Case-to-Sink | Typ. | - | /W | ||
| RJA | Thermal Resistance, Junction-to-Ambient | - | 62.5 | /W | ||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 1mA | 650 | -- | -- | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 1mA, TJ = 150 | -- | -- | 650 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V | -- | -- | 10 | uA |
| IDSS | Zero Gate Voltage Drain Current | VDS = 480 V, TC = 125 | -- | 60 | -- | uA |
| IGSSF | Gate-Body Leakage Current, Forward | VGS = 30 V, VDS = 0 V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current, Reverse | VGS = -30 V, VDS = 0 V | -- | -- | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250uA | 3.0 | -- | 5.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 15.3A | -- | 89 | 105 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0 V, f = 250KHz | -- | 2303 | -- | pF |
| Coss | Output Capacitance | -- | 55 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | -- | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID = 15.3A, RG = 10,VGS = 10 V (Note 4, 5) | -- | 23 | -- | ns |
| tr | Turn-On Rise Time | -- | 12 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 80 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 9 | -- | ns | |
| Qg | Total Gate Charge | VDS = 400 V, ID = 15.3 A, VGS = 10 V (Note 4, 5) | -- | 57.7 | -- | nC |
| Qgs | Gate-Source Charge | -- | 14 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 29.3 | -- | nC | |
| RG | Gate Resistance | f = 1MHz | 1.1 | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 40 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 110 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0 V, IS =21.5A | -- | -- | 1.2 | V |
| trr | Reverse Recovery Time | VDD = 400 V, IS = 21.5A, dIF / dt = 100 A/us (Note 4) | -- | 139 | -- | ns |
| Qrr | Reverse Recovery Charge | VDD = 400 V, IS = 21.5A, dIF / dt = 100 A/us (Note 4) | -- | 0.91 | -- | uC |
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