High current n channel mosfet XTX BRT40N60P3 with low RDS ON and pulsed drain current up to 240 amps
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Product Description
Product Overview
The BRT40N60P3 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, providing efficient performance with a breakdown voltage of 40V and a continuous drain current of 60A.
Product Attributes
- Brand: XTX Technology Inc.
- Product Code: BRT40N60P3
- Package: TO-252-2L
- Ordering Part Number: T40N60
- Reel Quantity: 2500pcs/Reel
- Lead Free: Yes
- Registered Trademark: XTX logo
Technical Specifications
| Symbol | Definition | Ratings | Unit |
| VDS | Drain-to-Source Voltage | 40 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (TC = 25°C) | 60 | A |
| ID | Continuous Drain Current (TC = 100°C) | 38 | A |
| IDM | Pulsed Drain Current (1) | 240 | A |
| EAS | Single Pulsed Avalanche Energy (2) | 100 | mJ |
| PD | Power Dissipation, TC = 25°C | 114 | W |
| RθJA | Thermal Resistance, Junction to Ambient(3) | 40 | °C/W |
| RθJC | Thermal Resistance, Junction to Case | 1.5 | °C/W |
| TJ, TSTG | Junction & Storage Temperature Range | -55 ~ +150 | °C |
| V(BR)DSS | Drain-Source Breakdown Voltage (ID = 250µA, VGS = 0V) | 40 | V |
| IDSS | Zero Gate Voltage Drain Current (VDS = 40V, VGS = 0V) | 1 | µA |
| IGSS | Gate-Body Leakage Current (VDS = 0V, VGS = ±20V) | ±100 | nA |
| VGS(TH) | Gate Threshold Voltage (VDS = VGS, ID = 250uA) | 1.1 - 2.5 | V |
| RDS(ON) | Static Drain-Source ON-Resistance (VGS = 10V, ID = 30A) | 7.0 | mΩ |
| RDS(ON) | Static Drain-Source ON-Resistance (VGS = 4.5V, ID = 20A) | 12 | mΩ |
| Ciss | Input Capacitance (VGS = 0V, VDS = 20V, f = 1MHz) | 2396 | pF |
| Coss | Output Capacitance | 162 | pF |
| Crss | Reverse Transfer Capacitance | 138 | pF |
| Qg | Total Gate Charge (VGS = 0 to 10V, VDS = 20V, ID = 20A) | 48 | nC |
| Qgs | Gate Source Charge | 10 | nC |
| Qgd | Gate Drain("Miller") Charge | 10 | nC |
| td(on) | Turn-On Delay Time (VGS = 10V, VDD = 20V, ID= 20A, RG = 3Ω) | 10 | ns |
| tr | Turn-On Rise Time | 28 | ns |
| td(off) | Turn-Off Delay Time | 38 | ns |
| tf | Turn-Off Fall Time | 9 | ns |
| IS | Continuous Source Current | 60 | A |
| VSD | Forward on voltage (VGS = 0V, IS = 30A) | 1.2 | V |
| Trr | Reverse Recovery Time (IF = 20A, di/dt = 100A/us) | 11 | ns |
| Qrr | Reverse Recovery Charge | 5 | nC |
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