VBsemi Elec IRF9640STRLPBF VB P channel MOSFET designed for power switching and fast switching speed

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Product Description

Product Overview

The IRF9640STRLPBF-VB is a high-performance P-channel MOSFET designed for various electronic applications. It features a dynamic dV/dt rating, repetitive avalanche rating, fast switching capabilities, and ease of paralleling, simplifying drive requirements. This MOSFET is suitable for applications requiring robust and efficient power switching.

Product Attributes

Brand: VBsemi
Part Number: IRF9640STRLPBF-VB
Configuration: Single
Package: TO-263
Origin: Taiwan

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
P-Channel MOSFET
Drain-Source Voltage	VDS		-200			V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current (TC = 25 C)	ID	VGS = -10 V			-11	A
Continuous Drain Current (TC = 100 C)	ID	VGS = -10 V			-6.8	A
Pulsed Drain Current	IDM	a			-44	A
Repetitive Avalanche Current	IAR	a			-11	A
Maximum Power Dissipation (TC = 25 C)	PD				125	W
Peak Diode Recovery dV/dt	dV/dt	c			-5.0	V/ns
Operating Junction and Storage Temperature Range	TJ, Tstg		-55		+150	C
Drain-Source On-State Resistance	RDS(on)	ID = -6.6 A, VGS = -10 V b		0.50
Total Gate Charge	Qg	ID = -11 A, VDS = -160 V, VGS = -10 V b			44	nC
Gate-Source Charge	Qgs			7.1		nC
Gate-Drain Charge	Qgd			27		nC
Static Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = -250 A	-200			V
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = -250 A	-2.0		-4.0	V
Zero Gate Voltage Drain Current	IDSS	VDS = -200 V, VGS = 0 V			-100	A
Zero Gate Voltage Drain Current (TJ = 125 C)	IDSS	VDS = -160 V, VGS = 0 V			-500	A
Forward Transconductance	gfs	VDS = -50 V, ID = -6.6 A b	4.1			S
Input Capacitance	Ciss	VGS = 0 V, VDS = -25 V, f = 1.0 MHz		200		pF
Output Capacitance	Coss	VGS = 0 V, VDS = -25 V, f = 1.0 MHz		370		pF
Reverse Transfer Capacitance	Crss	VGS = 0 V, VDS = -25 V, f = 1.0 MHz		81		pF
Turn-On Delay Time	td(on)	VDD = -100 V, ID = -11 A, RG = 9.1 , RD = 8.6		4		ns
Rise Time	tr	VDD = -100 V, ID = -11 A, RG = 9.1 , RD = 8.6		43		ns
Turn-Off Delay Time	td(off)	VDD = -100 V, ID = -11 A, RG = 9.1 , RD = 8.6		39		ns
Fall Time	tf	VDD = -100 V, ID = -11 A, RG = 9.1 , RD = 8.6		38		ns
Internal Drain Inductance	LD	Between lead, 6 mm from package and center of die contact		4.5		nH
Internal Source Inductance	LS			7.5		nH
Gate Input Resistance	Rg	f = 1 MHz, open drain	0.3		1.7
Continuous Source-Drain Diode Current	IS				-11	A
Pulsed Diode Forward Current	ISM	a			-44	A
Body Diode Voltage	VSD	TJ = 25 C, IS = -11 A, VGS = 0 V b			-5	V
Body Diode Reverse Recovery Time	trr	TJ = 25 C, IF = -11 A, dI/dt = 100 A/s b		250	300	ns
Body Diode Reverse Recovery Charge	Qrr			3.6		C