Trench Power MOSFET Dual P Channel 30 Volt Load Switch High Current Rating VBsemi Elec SDM4953 VB

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Product Description

Product Overview

The SDM4953-VB is a Dual P-Channel 30-V (D-S) MOSFET featuring Trench Power MOSFET technology and 100% UIS tested. It is designed for load switch applications and offers advantages such as halogen-free compliance.

Product Attributes

Brand: VBsemi
Certifications: Halogen-free, RoHS Compliant

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 A	- 30			V
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 A	- 1.0	- 3.0		V
Zero Gate Voltage Drain Current	IDSS	VDS = - 30 V, VGS = 0 V		- 1	A
On-State Drain Current	ID(on)	VDS - 10 V, VGS = - 10 V		- 30		A
Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V, ID = - 6.3 A		0.035	0.045
Forward Transconductance	gfs	VDS = - 10 V, ID = - 6.3 A		23		S
Input Capacitance	Ciss	VDS = - 15 V, VGS = 0 V, f = 1 MHz		1350		pF
Output Capacitance	Coss	VDS = - 15 V, VGS = 0 V, f = 1 MHz		215		pF
Reverse Transfer Capacitance	Crss	VDS = - 15 V, VGS = 0 V, f = 1 MHz		185		pF
Total Gate Charge	Qg	VDS = - 15 V, VGS = - 10 V, ID = - 6.3 A		32	50	nC
Gate-Source Charge	Qgs	VDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A		15	25	nC
Gate-Drain Charge	Qgd	VDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A		7.5		nC
Gate Resistance	Rg	f = 1 MHz		5.8
Turn-On Delay Time	td(on)	VDD = - 15 V, RL = 15 , ID - 1 A, VGEN = - 10 V, Rg = 1		10	15	ns
Rise Time	tr	VDD = - 15 V, RL = 15 , ID - 1 A, VGEN = - 10 V, Rg = 1		8	15	ns
Turn-Off Delay Time	td(off)	VDD = - 15 V, RL = 15 , ID - 1 A, VGEN = - 10 V, Rg = 1		45	70	ns
Fall Time	tf	VDD = - 15 V, RL = 15 , ID - 1 A, VGEN = - 10 V, Rg = 1		12	25	ns
Continous Source-Drain Diode Current	IS	TC = 25 C		- 4.1		A
Body Diode Voltage	VSD	IS = - 2 A, VGS = 0 V	- 0.75	- 1.2		V
Body Diode Reverse Recovery Time	trr	IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C		34	60	ns
Body Diode Reverse Recovery Charge	Qrr	IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C		22	40	nC