Low RDS ON Power MOSFET XTX BRT30N70P3 with 30V Drain Source Breakdown Voltage and TO 252 2L Package
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Product Description
Product Overview
The BRT30N70P3 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, providing efficient performance with a breakdown voltage of 30V and a continuous drain current of 70A.
Product Attributes
- Brand: XTX Technology Inc.
- Product Code: BRT30N70P3
- Package: TO-252-2L
- Lead Free: Yes
- Registered Trademark: XTX logo
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | ID = 250A, VGS = 0V | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 30V, VGS = 0V | - | - | 1 | uA |
| IGSS | Gate-Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 1.0 | 1.6 | 2.5 | V |
| RDS(ON) | Static Drain-Source ON-Resistance | VGS = 10V, ID = 30A | - | 6.0 | - | m |
| VGS = 4.5V, ID = 20A | - | 9.5 | - | m | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 15V, f = 1MHz | - | 1899 | - | pF |
| Coss | Output Capacitance | - | 221 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 191 | - | pF | |
| Qg | Total Gate Charge | VGS = 0 to 10V, VDS = 15V, ID = 30A | - | 34 | - | nC |
| Qgs | Gate Source Charge | - | 6.5 | - | nC | |
| Qgd | Gate Drain("Miller") Charge | - | 7.5 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGS = 10V, VDD = 15V, ID= 30A, RGEN = 3 | - | 7 | - | ns |
| tr | Turn-On Rise Time | - | 14 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 34 | - | ns | |
| tf | Turn-Off Fall Time | - | 11 | - | ns | |
| Drain-Source Diode Characteristics | ||||||
| IS | Continuous Source Current | - | - | 70 | A | |
| VSD | Forward on voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Reverse Recovery Time | IF = 20A, di/dt = 100A/us | - | 10 | - | ns |
| Qrr | Reverse Recovery Charge | - | 1.7 | - | nC | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-to-Source Voltage | - | - | 30 | V | |
| VGS | Gate-to-Source Voltage | - | - | 20 | V | |
| ID | Continuous Drain Current | TC = 25C | - | - | 70 | A |
| TC = 100C | - | - | 45 | A | ||
| IDM | Pulsed Drain Current | (1) | - | - | 280 | A |
| EAS | Single Pulsed Avalanche Energy | (2) | - | 81 | - | mJ |
| PD | Power Dissipation | TC = 25C | - | - | 50 | W |
| RJA | Thermal Resistance, Junction to Ambient | (3) | - | - | 31 | oC/W |
| RJC | Thermal Resistance, Junction to Case | - | - | 2.5 | oC/W | |
| TJ, TSTG | Junction & Storage Temperature Range | -55 | - | +150 | oC | |
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