Power Switching Silicon N-channel VDMOSFET XCH XCH2N65M Featuring TO-252 Package and RoHS Compliance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Description
The XCH2N65M is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for various power switching circuits, contributing to system miniaturization and higher efficiency. The device comes in a TO-252 package that complies with RoHS standards.
Product Attributes
- Package: TO-252
- RoHS Standard: Compliant
Technical Specifications
| Model | VDSS (V) | ID (A) | PD (W) | RDS(ON) () | VGS(TH) (V) | EAS (mJ) | Package |
| XCH2N65M | 650 | 2.0 | 35 | 3.8 (typ.) | 2.0 - 4.0 | 68 | TO-252 |
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