VBsemi Elec TPC8107 9 VB P Channel TrenchFET MOSFET for Notebook Adaptor Load Switching Applications

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Product Description

Product Overview

This P-Channel 30-V (D-S) TrenchFET Power MOSFET is designed for load switching applications in notebook adaptors. It features 100% Rg and UIS tested, and is halogen-free. Key specifications include a low on-resistance of 0.011 at VGS = -10 V and 0.015 at VGS = -4.5 V, with a continuous drain current of up to 13.5 A.

Product Attributes

Brand: VBsemi (implied by website and part number prefix)
Certifications: RoHS COMPLIANT, Halogen-free
Type: P-Channel MOSFET
Technology: TrenchFET Power MOSFET

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = -250 A			-30	V
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = -250 A	-1.4	-2.5		V
Zero Gate Voltage Drain Current	IDSS	VDS = -30 V, VGS = 0 V			-1	A
On-State Drain Current	ID(on)	VDS -10 V, VGS = -10 V		-30		A
Drain-Source On-State Resistance	RDS(on)	VGS = -10 V, ID = -10 A		0.011
Drain-Source On-State Resistance	RDS(on)	VGS = -4.5 V, ID = -8 A		0.015
Input Capacitance	Ciss	VDS = -15 V, VGS = 0 V, f = 1 MHz		2550		pF
Output Capacitance	Coss	VDS = -15 V, VGS = 0 V, f = 1 MHz		455		pF
Reverse Transfer Capacitance	Crss	VDS = -15 V, VGS = 0 V, f = 1 MHz		390		pF
Total Gate Charge	Qg	VDS = -15 V, VGS = -10 V, ID = -10 A		57	86	nC
Total Gate Charge	Qg	VDS = -15 V, VGS = -4.5 V, ID = -10 A		29.5	45	nC
Gate Resistance	Rg	f = 1 MHz		0.5	2.2
Turn-On Delay Time	td(on)	VDD = -15 V, RL = 1.5 , ID -10 A, VGEN = -10 V, Rg = 1		13	25	ns
Turn-Off Delay Time	td(off)	VDD = -15 V, RL = 1.5 , ID -10 A, VGEN = -10 V, Rg = 1		40	70	ns
Continuous Source-Drain Diode Current	IS	TC = 25 C			-4.1	A
Body Diode Reverse Recovery Time	trr	IF = -10 A, dI/dt = 100 A/s, TJ = 25 C		27	45	ns
Body Diode Reverse Recovery Charge	Qrr	IF = -10 A, dI/dt = 100 A/s, TJ = 25 C		16	27	nC