Low Gate Charge N Channel MOSFET XYD X15N060TLE2 Suitable for SMPS and Uninterruptible Power Supplies
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Product Description
X15N060TLE2 N-CHANNEL MOSFET
The X15N060TLE2 is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers low gate charge, low Ciss, and fast switching, making it suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, and hard-switched and high-frequency circuits.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Model: X15N060TLE2
- Package: TO-252-2L
- Origin: Xiamen
Technical Specifications
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | VDS | - | - | 60 | V | - |
| VGS | -20 | - | 20 | V | - | |
| ID | - | - | 52 | A | TC=25 | |
| ID | - | - | 33 | A | TC=100 | |
| IDM | - | - | 208 | A | Pulsed Drain Current(Note 2) | |
| EAS | - | - | 81 | mJ | Single Pulse Avalanche Energy L=0.5mH,VD=48V, TC=25 | |
| Power Dissipation | PD | - | - | 86 | W | TC=25 |
| PD | - | - | 3.4 | W | TA=25 | |
| Temperature Range | Tj,TSTG | -50 | - | 150 | Operating Junction and Storage Temperature Range | |
| Thermal Characteristics | Rth(J-c) | - | 1.45 | - | /W | Thermal resistance, Junction to Case |
| Rth(J-a) | - | 36 | - | - | Thermal resistance, Junction to Ambient | |
| Electrical Characteristics (Tj=25) | BVDSS | 60 | - | - | V | VGS=0V,ID=250A |
| IDSS | - | - | 1 | A | VDS=60V,VGS=0V | |
| IGSSF | - | - | 100 | nA | VGS=20V,VDS=0V | |
| IGSSR | - | - | -100 | nA | VGS=-20V,VDS=0V | |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | - | 2.4 | V | VDS=VGS,ID=250A |
| RDS(on) | - | 12.4 | 15 | m | VGS=10V,ID=15A | |
| Drain-Source On-State Resistance | RDS(on) | - | 15.4 | 21 | m | VGS=4.5V,ID=10A |
| Gate Resistance | Rg | - | 2 | - | VGS=0V, VDS=0V, f=1MHz | |
| Dynamic Characteristics | Ciss | - | 2228 | - | pF | VDS=30V,VGS=0V,f=1.0MHZ |
| Coss | - | 104 | - | pF | - | |
| Crss | - | 92 | - | pF | - | |
| Switching Characteristics | td(on) | - | 16 | - | ns | VDD=39V,VGS=10V,RG=20,ID=25A |
| tr | - | 48 | - | ns | - | |
| td(off) | - | 166 | - | ns | - | |
| tf | - | 83 | - | ns | - | |
| Gate Charge Characteristics | Qg | - | 43 | - | nC | VDS=30V,ID=25A,VGS=10V |
| Qgs | - | 9 | - | nC | - | |
| Qgd | - | 9 | - | nC | - | |
| Reverse Diode Characteristics | IS | - | - | 52 | A | Continuous Diode Forward Current |
| ISM | - | - | 208 | A | Pulsed Diode Forward Current | |
| Diode Forward Voltage | VSD | - | - | 1.2 | V | IS=15A,VGS=0V |
| Reverse Recovery | trr | - | 26 | - | ns | VDS=51V,VGS=0V,IS=25A,di/dt=100A/s |
| Qrr | - | 21 | - | nC | - |
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