Low Gate Charge N Channel Power MOSFET VBsemi Elec HFD4N50-VB with RoHS Compliance and TO 252 Package

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Product Description

HFD4N50-VB Power MOSFET

The HFD4N50-VB is a high-performance N-Channel Power MOSFET designed for simple drive requirements and enhanced ruggedness. It features low gate charge (Qg), improved gate, avalanche, and dynamic dV/dt ruggedness, and fully characterized capacitance, avalanche voltage, and current. This product is compliant with the RoHS directive 2002/95/EC.

Product Attributes

Brand: VBsemi
Model: HFD4N50-VB
Configuration: Single
Certifications: RoHS Compliant
Package: TO-252

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 A	650	-	-	V
VDS Temperature Coefficient	VDS/TJ	Reference to 25 C, ID = 1 mA	-	-670	-	mV/C
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 A	2.5	-	5.0	V
Gate-Source Leakage	IGSS	VGS = 30 V	-	-	100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 650 V, VGS = 0 V	-	-	25	A
Zero Gate Voltage Drain Current	IDSS	VDS = 520 V, VGS = 0 V, TJ = 125 C	-	-	250	A
Drain-Source On-State Resistance	RDS(on)	ID = 3.1 A, VGS = 10 V	-	-	2.1
Forward Transconductance	gfs	VDS = 50 V, ID = 3.1 A	3.9	-	-	S
Input Capacitance	Ciss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz	-	1417	-	pF
Output Capacitance	Coss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz	-	177	-	pF
Reverse Transfer Capacitance	Crss	VGS = 0 V, VDS = 25 V, f = 1.0 MHz	-	7.0	-	pF
Output Capacitance	Coss	VDS = 520 V, f = 1.0 MHz	-	48	-	pF
Effective Output Capacitance	Coss eff.	VDS = 0 V to 520 V	-	84	-	pF
Total Gate Charge	Qg	ID = 3.2 A, VDS = 400 V, VGS = 10 V	-	-	48	nC
Gate-Source Charge	Qgs	ID = 3.2 A, VDS = 400 V, VGS = 10 V	-	-	12	nC
Gate-Drain Charge	Qgd	ID = 3.2 A, VDS = 400 V, VGS = 10 V	-	-	19	nC
Turn-On Delay Time	td(on)	VDD = 325 V, ID = 3.2 A, RG = 9.1 , RD = 62	-	4	-	ns
Rise Time	tr	VDD = 325 V, ID = 3.2 A, RG = 9.1 , RD = 62	-	20	-	ns
Turn-Off Delay Time	td(off)	VDD = 325 V, ID = 3.2 A, RG = 9.1 , RD = 62	-	34	-	ns
Fall Time	tf	VDD = 325 V, ID = 3.2 A, RG = 9.1 , RD = 62	-	18	-	ns
Continuous Source-Drain Diode Current	IS	-	-	-	4	A
Pulsed Diode Forward Current	ISM	-	-	-	21	A
Body Diode Voltage	VSD	TJ = 25 C, IS = 3.2 A, VGS = 0 V	-	-	1.5	V
Body Diode Reverse Recovery Time	trr	TJ = 25 C, IF = 3.2 A, dI/dt = 100 A/s	-	493	739	ns
Body Diode Reverse Recovery Charge	Qrr	TJ = 25 C, IF = 3.2 A, dI/dt = 100 A/s	-	2.1	3.2	C