Low gate charge MOSFET XYD X2P2N040GLV8 designed for AC DC quick chargers and power management devices
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The X2P2N040GLV8 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it 100% avalanche tested. This MOSFET is designed for applications such as synchronous rectification for AC/DC quick chargers, battery management systems, and uninterruptible power supplies (UPS).
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Product Name: X2P2N040GLV8
- Package Type: PDFN5*6-8L
- Packaging: Tape&reel
Technical Specifications
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | VDSS | - | - | 40 | V | - |
| VGS | -20 | - | 20 | V | - | |
| ID (TC=25) | - | - | 150 | A | TC=25 | |
| ID (TC=100) | - | - | 95 | A | TC=100 | |
| IDM | - | - | 600 | A | - | |
| EAS | - | - | 100 | mJ | L=0.5mH,VD=32V, TC=25 | |
| Power Dissipation | PD | - | - | 83 | W | TC=25 |
| Tj,TSTG | -55 | - | 150 | - | ||
| Rth(ch-c) | - | - | 1.5 | /W | - | |
| Electrical Characteristics (Tj=25,unless otherwise noted) | BVDSS | 40 | - | - | V | VGS=0V,ID=250A |
| IDSS | - | - | 1 | A | VDS=40V,VGS=0V | |
| IGSSF | - | - | 100 | nA | VGS=20V,VDS=0V | |
| IGSSR | - | - | -100 | nA | VGS=-20V,VDS=0V | |
| VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS,ID=250A | |
| RDS(on) (VGS=10V,ID=20A) | - | 1.7 | 2.2 | m | - | |
| RDS(on) (VGS=4.5V,ID=20A) | - | 2.5 | 3.0 | m | - | |
| Rg | - | 2.1 | - | VGS=0V, VDS=0V, f=1MHz | ||
| Dynamic Characteristics | Ciss | - | 3855 | - | pF | VDS=25V,VGS=0V,f=1.0MHZ |
| Coss | - | 2937 | - | pF | - | |
| Crss | - | 555 | - | pF | - | |
| Switching Characteristics | td(on) | - | 16 | - | ns | VDD=20V,ID=50A,VGS=10V,RG=2.7 |
| tr | - | 104 | - | ns | - | |
| td(off) | - | 86 | - | ns | - | |
| tf | - | 105 | - | ns | - | |
| Gate Charge Characteristics | Qg | - | 66.3 | - | nC | VDS=32V,ID=10A,VGS=10V |
| Qgs | - | 13.5 | - | nC | - | |
| Qgd | - | 12.2 | - | nC | - | |
| Reverse Diode | IS | - | - | 150 | A | - |
| ISM | - | - | 600 | A | - | |
| VSD | - | - | 1.2 | V | IS=20A,VGS=0V | |
| Reverse Recovery | trr | - | 56 | - | ns | VDS=30V,VGS=0V,IS=50A di/dt=100A/s |
| Qrr | - | 76 | - | nC | - |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina