Hefei Purple Horn E-Commerce Co., Ltd.
                                                                                                           
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trench n channel mosfet XCH XCH3N10 offering superior gate charge and rds on performance for power devices

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The XCH3N10 is a high-performance trench N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.

Product Attributes

  • Brand: XCH
  • Type: N-Ch MOSFET
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS, Green Device Available

Technical Specifications

SymbolParameterConditionsMin.Typ.Max.Unit
Absolute Maximum RatingsBVDSSDrain-Source Voltage100V
VGSGate-Source Voltage±20V
ID@TA=25°CContinuous Drain Current3A
ID@TA=70°CContinuous Drain Current1.8A
IDMPulsed Drain Current12A
Thermal DataPD@TA=25°CTotal Power Dissipation1.6W
TSTGStorage Temperature Range-55150°C
TJOperating Junction Temperature Range-55150°C
Electrical CharacteristicsBVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100V
RDS(ON)Static Drain-Source On-ResistanceVGS=10V , ID=1.5A202240
RDS(ON)Static Drain-Source On-ResistanceVGS=4.5V , ID=1A212
VGS(th)Gate Threshold VoltageVGS=VDS , ID =250uA11.62.2V
IDSSDrain-Source Leakage CurrentVDS=100V , VGS=0V , TJ=25°C1μA
IGSSGate-Source Leakage CurrentVGS=±20V , VDS=0V±100nA
QgTotal Gate ChargeVDS=50V , VGS=0 to 10V , ID=2AnC
CissInput CapacitanceVDS=25V , VGS=0V , f=1MHzpF
Diode CharacteristicsISContinuous Source CurrentVG=VD=0V , Force Current3A
VSDDiode Forward VoltageVGS=0V , IS=1.5A , TJ=25°C1.2V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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