N Channel and P Channel 40 Volt MOSFET VBsemi Elec VBE5415 for Power Electronics Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

VBE5415 N- and P-Channel 40 V (D-S) MOSFET

The VBE5415 is a Trench Power MOSFET designed for high-efficiency applications. It features 100% Rg and UIS testing for guaranteed performance. This N- and P-channel pair MOSFET is ideal for use in CCFL inverters.

Product Attributes

Brand: VBsemi
Model: VBE5415
Channel Type: N-Channel and P-Channel
Voltage Rating: 40 V
Package Type: TO-252-4L (D-PAK)

Technical Specifications

Parameter	Symbol	N-Channel (Typical)	P-Channel (Typical)	Unit
Drain-Source Voltage	VDS	40	-40	V
RDS(on) at VGS = 10 V	RDS(on)	0.014	0.014
RDS(on) at VGS = 4.5 V	RDS(on)	0.016	0.016
Continuous Drain Current (TC = 25 C)	ID	50	-50	A
Continuous Source Current (Diode Conduction) (TC = 25 C)	IS	30	-30	A
Pulsed Drain Current	IDM	150	-150	A
Single Pulse Avalanche Energy	EAS	245	245	mJ
Maximum Power Dissipation (TC = 25 C)	PD	108	108	W
Operating Junction and Storage Temperature Range	TJ, Tstg	-55 to +175		C
Junction-to-Ambient Thermal Resistance (PCB Mount)	RthJA	85		C/W
Junction-to-Case (Drain) Thermal Resistance	RthJC	3	3.1	C/W
Gate-Source Threshold Voltage (ID = 250 A)	VGS(th)	1.0 - 3.0	-1.0 to -3.0	V
Gate-Source Leakage (VDS = 0 V, VGS = 20 V)	IGSS	100		nA
Zero Gate Voltage Drain Current (VDS = 40 V, TJ = 125 C)	IDSS	1		A
Forward Transconductance (ID = 38 A)	gfs	40	18	S
Input Capacitance (VDS = 20 V, f = 1 MHz)	Ciss	1799 - 2248	2000 - 3500	pF
Output Capacitance (VDS = 20 V, f = 1 MHz)	Coss	282 - 352	320 - 550	pF
Reverse Transfer Capacitance (VDS = 20 V, f = 1 MHz)	Crss	109 - 136	220 - 360	pF
Total Gate Charge (ID = 10 A)	Qg	310	-	nC
Gate-Source Charge (ID = 10 A)	Qgs	5.7	5.5	-	nC
Gate-Drain Charge (ID = 10 A)	Qgd	4.8	10.5	-	nC
Gate Resistance (f = 1 MHz)	Rg	2 - 6.2	3.1 - 9.5
Turn-On Delay Time (ID 10 A)	td(on)	7 - 11	11 - 17	ns
Rise Time (ID 10 A)	tr	21 - 32	9 - 14	ns
Turn-Off Delay Time (ID 10 A)	td(off)	33 - 50	55 - 83	ns
Fall Time (ID 10 A)	tf	19 - 29	91 - 137	ns
Source-Drain Diode Pulsed Current	ISM	32		A
Source-Drain Diode Forward Voltage (IS = 4 A)	VSD	0.79 - 1.2	0.82 - 1.2	V