220F Packaged Silicon N Channel VDMOSFET XCH 7N65F Ideal for Power Switching and Enhanced Performance

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The XCH7N65F is a silicon N-channel Enhanced VDMOSFET utilizing self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The device is packaged in a RoHS-compliant TO-220F package.

Product Attributes

Brand: XCH
Material: Silicon N-Channel
Package: TO-220F
Certifications: RoHS standard

Technical Specifications

Symbol	Parameter	Test Conditions	Rating	Units
Absolute Maximum Ratings
VDSS	Drain-to-Source Voltage	Tc=25 unless otherwise specified	650	V
ID	Continuous Drain Current	Tc=25 unless otherwise specified	7	A
ID	Continuous Drain Current	TC=100 C	4.5	A
IDMa1	Pulsed Drain Current		28	A
VGS	Gate-to-Source Voltage		30	V
EAsa2	Single Pulse Avalanche Energy		500	mJ
EAra1	Avalanche Energy, Repetitive		54	mJ
IAR a1	Avalanche Current		3.3	A
dv/dta3	Peak Diode Recovery dv/dt		5.0	V/ns
PD	Power Dissipation		40	W
TJ, Tstg	Operating Junction and Storage Temperature Range		55 to 150
TL	Maximum Temperature for Soldering		300
Thermal Characteristics
RJC	Thermal Resistance, Junction-to-Case		3.13	/ W
RJA	Thermal Resistance, Junction-to-Ambient		100	/ W
Electrical Characteristics (Tc= 25 unless otherwise specified)
OFF Characteristics
VDSS	Drain to Source Breakdown Voltage	VGS=0V,ID=250A	650	V
BVDSS/TJ	Bvdss Temperature Coefficient	ID=250uA,Reference25	0.67	V/
IDSS	Drain to Source Leakage Current	VDS=650V, VGS=0V,Ta=25	1.0	A
IDSS	Drain to Source Leakage Current	VDS=520V, VGS=0V,Ta=125	100	A
IGSS(F)	Gate to Source Forward Leakage	VGS=+30V	100	nA
IGSS(R)	Gate to Source Reverse Leakage	VGS=-30V	-100	nA
ON Characteristics
RDS(ON)	Drain-to-Source On-Resistance	VGS=10V,ID=3.5A	1.25
VGS(TH)	Gate Threshold Voltage	VDS=VGS,ID=250A	2.0 to 4.0	V
gfs	Forward Trans conductance	VDS=15V,ID=3.5A	6.5	S
Dynamic Characteristics
Ciss	Input Capacitance	VGS=0V VDS=25V f=1.0MHz	1080	pF
Coss	Output Capacitance		93	pF
Crss	Reverse Transfer Capacitance		37.5	pF
Resistive Switching Characteristics
td(ON)	Turn-on Delay Time	ID=7A,VDD=325V VGS=10V,Rg=9.1	11	ns
tr	Rise Time		10	ns
td(OFF)	Turn-Off Delay Time		36	ns
tf	Fall Time		18	ns
Qg	Total Gate Charge	ID=7A,VDD=325V VGS=10V	23	nC
Qgs	Gate to Source Charge		5	nC
Qgd	Gate to Drain (Miller)Charge		8	nC
Source-Drain Diode Characteristics
ISD	Continuous Source Current (Body Diode)		7	A
ISM	Maximum Pulsed Current (Body Diode)		28	A
VSD	Diode Forward Voltage	IS=7A,VGS=0V	1.5	V
trr	Reverse Recovery Time	IS=7A,Tj=25 dIF/dt=100A/s,VGS=0V	280	ns
Qrr	Reverse Recovery Charge		1400	nC