SOT23 packaged NPN transistor XZT MMBT5551 for medium power amplification and switching applications

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Product Description

Product Overview

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401.

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
VCBO	Collector-Base Voltage				180	V
VCEO	Collector-Emitter Voltage				160	V
VEBO	Emitter-Base Voltage				6	V
IC	Collector Current				600	mA
PC	Collector Power Dissipation				300	mW
RJA	Thermal Resistance From Junction To Ambient			416	/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55		+150
V(BR)CBO	Collector-base breakdown voltage	IC=100A, IE=0	180			V
V(BR)CEO	Collector-emitter breakdown voltage	* IC=1mA, IB=0	160			V
V(BR)EBO	Emitter-base breakdown voltage	IE=10A, IC=0	6			V
ICBO	Collector cut-off current	VCB=120V, IE=0			50	nA
IEBO	Emitter cut-off current	VEB=4V, IC=0			50	nA
hFE(1)	DC current gain	* VCE=5V, IC=1mA	80
hFE(2)	DC current gain	* VCE=5V, IC=10mA	100	300
hFE(3)	DC current gain	* VCE=5V, IC=50mA	50
VCE(sat)1	Collector-emitter saturation voltage	* IC=10mA, IB=1mA		0.15		V
VCE(sat)2	Collector-emitter saturation voltage	* IC=50mA, IB=5mA		0.2		V
VBE(sat)1	Base-emitter saturation voltage	* IC=10mA, IB=1mA		1		V
VBE(sat)2	Base-emitter saturation voltage	* IC=50mA, IB=5mA		1		V
fT	Transition frequency	VCE=10V,IC=10mA, f=100MHz	100	300		MHz
Cob	Collector output capacitance	VCB=10V, IE=0, f=1MHz		6		pF